A V-/W-band 0.18-&amp;#x03BC;m CMOS phase shifter MMIC with 180&amp;#x00B0;-300&amp;#x00B0; phase tuning range

Tsai, M.-C.; Wu, Jen-Chieh; Chin, Ting-Yueh; Chang, Chia-Chan

doi:10.1109/apmc.2012.6421508

Cited by 3 publications

(4 citation statements)

References 6 publications

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“…Note that the testing pads are not de-embedded from the measurements. Table 1 shows the measured results comparisons of this proposed PS with other reported RTPSs using silicon-based technology [3,[6][7][8]. By using 0.18 µm CMOS technology, the RTPS circuits in [3,6] operate at 24 GHz and 60 GHz, respectively, while the RTPS circuits in this paper is working at 80-90 GHz with a comparable insertion loss to those designs at lower frequencies.…”

Section: Design Conceptmentioning

confidence: 95%

“…Table 1 shows the measured results comparisons of this proposed PS with other reported RTPSs using silicon-based technology [3,[6][7][8]. By using 0.18 µm CMOS technology, the RTPS circuits in [3,6] operate at 24 GHz and 60 GHz, respectively, while the RTPS circuits in this paper is working at 80-90 GHz with a comparable insertion loss to those designs at lower frequencies. The authors of [8] reported a RTPS design using 0.12 µm SiGe BiCMOS technology at the same frequency band as our work; however, the phase shifting range and insertion loss variation are 65° and ±3.5 dB, while ours are 101° and ±0.05 dB, respectively.…”

Section: Design Conceptmentioning

confidence: 95%

“…Several designs of real-time power system simulator (RTPSs) with regard to insertion loss variation at 2 GHz on printed circuit board (PCB) [4], 2.45 GHz [5] and 24 GHz [3] in the complementary metal oxide semiconductor (CMOS) process are reported. Some publications have also demonstrated RTPSs operating at higher frequency bands, e.g., V-band [6,7] and W-band [8], but none of them consider the insertion loss variation.…”

Section: Open Accessmentioning

confidence: 99%

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A Compact W-Band Reflection-Type Phase Shifter with Extremely Low Insertion Loss Variation Using 0.13 µm CMOS Technology

Deng

Li²,

et al. 2015

Micromachines

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This paper presents a reflection-type phase shifter (RTPS) at W-band in a 0.13 µm complementary metal oxide semiconductor (CMOS) process. The RTPS is composed of a 90° hybrid coupler and two identical reflection loads. Lumped-distributed element transmission line is introduced in the 90° hybrid coupler to reduce the chip size. Series inductor-capacitor (LC) resonators are used as the reflective loads and parallel inductors are deployed to reduce insertion loss variation. By cascading two-stage RTPS, 90° phase shifting range and 10.5 dB insertion loss with 1 dB variations from 80 GHz to 90 GHz are achieved. An impressive 0.1 dB variation is obtained at 86 GHz.

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Section: Design Conceptmentioning

confidence: 95%

Section: Design Conceptmentioning

confidence: 95%

Section: Open Accessmentioning

confidence: 99%

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A Compact W-Band Reflection-Type Phase Shifter with Extremely Low Insertion Loss Variation Using 0.13 µm CMOS Technology

Deng

Li²,

et al. 2015

Micromachines

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“…Compared with the traditional π−type reflection loads [6], the proposed LC-type reflection loads with switches have the advantage of low insertion loss while maintaining the same phase tuning. The insertion loss can be improved due to high quality factor of the proposed reflection loads.…”

Section: Introductionmentioning

confidence: 99%

A 57-to-64 GHz ultra-compact 0.027 mm<sup>2</sup> reflection type phase shifter with low insertion loss

Li¹,

Cheng

et al. 2014

2014 44th European Microwave Conference

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An ultra-compact reflection-type phase shifter (RTPS) with more than 190 o continuous phase shift and low insertion loss using 90-nm CMOS process is demonstrated in this paper. Two circuit implementation techniques are employed: LC-type reflection loads with switches and 3-dB quadrature coupler. First, the LC-type reflection loads with switches have been proposed to alleviate the issue of quality factor. Second, the 3-dB quadrature coupler is designed with broadside couple to reduce chip size and enhance couple factor. Measurements show signal losses of 9.3dB±1.5dB including pad loss, loss flatness of ±0.9 dB, and a more than 190 o continuously tunable range across 57-64 GHz with 0-mW dc power consumption. To the best of our knowledge, the proposed phase shifter has the smallest die size of 0.027 mm 2 , among all reported V-band CMOS phase shifter, which is important for a multi-way phased-array system. Index Terms-reflection load, reflection-type phase shifter, Vband.

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An Overview of State-of-the-Art D-Band Radar System Components

Stadler

Papurcu

Welling

et al. 2022

Chips

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In this article, a literature study has been conducted including 398 radar circuit elements from 311 recent publications (mostly between 2010 and 2022) that have been reported mainly in the F-, D- and G-Band (80–200 GHz). This study is intended to give a state-of-the-art comparison on the performance of the different technologies—RFCMOS, SiGe/BiCMOS and III–V semiconductor composites—regarding the most crucial circuit parameters of Voltage-Controlled Oscillators (VCO), Power Amplifiers (PA), Phase Shifters (PS), Low-Noise Amplifiers (LNA) and Mixers. The most common topologies of each circuit element as well as the differences between the technolgies will futher be laid out while reasoning their benefits. Since not all devices were derived solely from single device publications, necessary steps to yield as fairly a comparison as possible were taken. Results include the area and power efficiency in RFCMOS, superior noise and power performance in III–V semiconductors and a continuous compromise between efficiency and performance in SiGe. The most rarely published devices, being Mixers and PSs, in the given frequency range have also been identified to give incentive for further developments.

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A V-/W-band 0.18-μm CMOS phase shifter MMIC with 180°-300° phase tuning range

Cited by 3 publications

References 6 publications

A Compact W-Band Reflection-Type Phase Shifter with Extremely Low Insertion Loss Variation Using 0.13 µm CMOS Technology

A Compact W-Band Reflection-Type Phase Shifter with Extremely Low Insertion Loss Variation Using 0.13 µm CMOS Technology

A 57-to-64 GHz ultra-compact 0.027 mm<sup>2</sup> reflection type phase shifter with low insertion loss

An Overview of State-of-the-Art D-Band Radar System Components

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