A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime

Klaassen, D.B.M.

doi:10.1016/0038-1101(92)90326-8

Cited by 417 publications

(201 citation statements)

References 19 publications

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“…In particular, the fitting of the measured injection dependent effective carrier lifetime curves of non-diffused/P-diffused/B-diffused n-type CZ wafers passivated either by dielectric films (SiN x , AlO x /SiN x ) or by heterojunction films (intrinsic a-Si:H, stack of intrinsic/doped a-Si:H, doped µc-Si:H) provides information on both bulk film properties and its interface properties towards the c-Si substrate, see Figure 4. A consistent set of models and parameters for the simulation of wafer based silicon solar cells were applied, 17 including Fermi-Dirac statistics, Klaassen's unified mobility model, 18,19 and the adapted parameters for radiative recombination 20 and Auger recombination. 21 …”

Section: Calibration Of the Simulation Modelmentioning

confidence: 99%

Three-dimensional numerical analysis of hybrid heterojunction silicon wafer solar cells with heterojunction rear point contacts

Ling

Duttagupta

et al. 2015

AIP Advances

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This paper presents a three-dimensional numerical analysis of homojunction/heterojunction hybrid silicon wafer solar cells, featuring front-side full-area diffused homojunction contacts and rear-side heterojunction point contacts. Their device performance is compared with conventional full-area heterojunction solar cells as well as conventional diffused solar cells featuring locally diffused rear point contacts, for both front-emitter and rear-emitter configurations. A consistent set of simulation input parameters is obtained by calibrating the simulation program with intensity dependent lifetime measurements of the passivated regions and the contact regions of the various types of solar cells. We show that the best efficiency is obtained when a-Si:H is used for rear-side heterojunction point-contact formation. An optimization of the rear contact area fraction is required to balance between the gains in current and voltage and the loss in fill factor with shrinking rear contact area fraction. However, the corresponding optimal range for the rear-contact area fraction is found to be quite large (e.g. 20-60 % for hybrid front-emitter cells). Hybrid rear-emitter cells show a faster drop in the fill factor with decreasing rear contact area fraction compared to front-emitter cells, stemming from a higher series resistance contribution of the rear-side a-Si:H(p+) emitter compared to the rear-side a-Si:H(n+) back surface field layer. Overall, we show that hybrid silicon solar cells in a front-emitter configuration can outperform conventional heterojunction silicon solar cells as well as diffused solar cells with rear-side locally diffused point contacts.

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Section: Calibration Of the Simulation Modelmentioning

confidence: 99%

Three-dimensional numerical analysis of hybrid heterojunction silicon wafer solar cells with heterojunction rear point contacts

Ling

Duttagupta

et al. 2015

AIP Advances

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“…Fermi statistics for carrier concentration calculation are used and all impurities are considered ionized [10], 2. Carrier mobility is calculated with the Klaassen models [15,16], This model provides a unified description of majority and minority carrier mobilities. It includes the effects of lattice scattering, impurity scattering (with screening from charged carriers), carrier-carrier scattering, and impurity clustering effects at high concentration of impurities.…”

Section: Theoretical Modelmentioning

confidence: 99%

3-D modeling of perimeter recombination in GaAs diodes and its influence on concentrator solar cells

Ochoa¹,

Algora²,

Espinet‐González³

et al. 2014

Solar Energy Materials and Solar Cells

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This paper describes a complete modelling of the perimeter recombination of GaAs diodes which solves most unknowns and suppresses the limitations of previous models. Because of the three dimensional nature of the implemented model, it is able to simulate real devices. GaAs diodes on two epiwafers with different base doping levels, sizes and geometries, namely square and circular are manufactured. The validation of the model is achieved by fitting the experimental measurements of the dark IV curve of the manufactured GaAs diodes. A comprehensive 3-D description of the occurring phenomena affecting the perimeter recombination is supplied with the help of the model. Finally, the model is applied to concentrator GaAs solar cells to assess the impact of their doping level, size and geometry on the perimeter recombination.

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“…A simple law to model the variation of mobility with the temperature is the following one [6][7][8]:…”

Section: Effect Of the Temperaturementioning

confidence: 99%

Study of the Static Properties I-V of Mosfet

Benzaoui¹,

Azizi²

2013

JMSE-B

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Today, telecommunications, data processing, physics and electronics, take a very important place in the activities of research of the various laboratories. In the field of the ultra high frequencies, the field-effect transistor MOSFET caused many studies and research to exploit its interesting and promising characteristics as well as possible. The objective of this contribution is devoted to study the static properties I-V of MOSFET. The study enables us to calculate the drain current as function of bias in both linear and saturated modes; this effect is evaluated using a numerical simulation program, one could notice that the MOS transistor characteristics are very sensitive to the temperature. The load of inversion via the threshold voltage and the mobility of the carriers are the two principal impacted parameters, it was noted that the increase in the temperature induces a drop of the threshold voltage like that of mobility, and an immediate consequence of this reduction is the diminution in the drain current. One can thus conclude that the temperature influences the performances of the device; more it is low, better is the reliability of the device under operation.

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A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime

Cited by 417 publications

References 19 publications

Three-dimensional numerical analysis of hybrid heterojunction silicon wafer solar cells with heterojunction rear point contacts

Three-dimensional numerical analysis of hybrid heterojunction silicon wafer solar cells with heterojunction rear point contacts

3-D modeling of perimeter recombination in GaAs diodes and its influence on concentrator solar cells

Study of the Static Properties I-V of Mosfet

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