Study of the Static Properties I-V of Mosfet

Abstract

Today, telecommunications, data processing, physics and electronics, take a very important place in the activities of research of the various laboratories. In the field of the ultra high frequencies, the field-effect transistor MOSFET caused many studies and research to exploit its interesting and promising characteristics as well as possible. The objective of this contribution is devoted to study the static properties I-V of MOSFET. The study enables us to calculate the drain current as function of bias in both linear and saturated modes; this effect is evaluated using a numerical simulation program, one could notice that the MOS transistor characteristics are very sensitive to the temperature. The load of inversion via the threshold voltage and the mobility of the carriers are the two principal impacted parameters, it was noted that the increase in the temperature induces a drop of the threshold voltage like that of mobility, and an immediate consequence of this reduction is the diminution in the drain current. One can thus conclude that the temperature influences the performances of the device; more it is low, better is the reliability of the device under operation.