A unified method for modeling semiconductor power devices

Goebel, H.; Kraus, R.; Mattausch, Hans Jürgen

doi:10.1109/63.321035

Cited by 55 publications

(18 citation statements)

References 7 publications

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“…By substituting (5) and (6) in (3), the diode current can be expressed as a function of and as follows:…”

Section: A Basic Equationsmentioning

confidence: 99%

A new SPICE model of power P-I-N diode based on asymptotic waveform evaluation

Strollo

1997

IEEE Trans. Power Electron.

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A new SPICE subcircuit model for power p-in diodes is proposed in this paper. The model is based on a moment-matching approximation of the ambipolar diffusion equation. It is shown that both the quasistatic model and the lumped-charge model can be obtained as low-order momentmatching approximations while new and more accurate models can be obtained from higher-order solutions. The proposed model takes into account emitter recombination in the highly doped end regions, conductivity modulation in the base and the moving-boundaries effect during reverse-recovery, showing good convergence properties and fast simulation times. Comparisons between the results of the SPICE model and both numerical device simulations and experimental results are presented.

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“…By substituting (5) and (6) in (3), the diode current can be expressed as a function of and as follows:…”

Section: A Basic Equationsmentioning

confidence: 99%

A new SPICE model of power P-I-N diode based on asymptotic waveform evaluation

Strollo

1997

IEEE Trans. Power Electron.

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“…If the method of finite differences [134]- [141] is used, the derivatives in the diffusion and transport equations are expressed by differences which have the form (14) (15) The index indicates the mesh-point number. Time is also discretized and an algebraic equation system results.…”

Section: ) Finite Differencesmentioning

confidence: 99%

“…Several research groups throughout the world have tried to advance the state of the art with respect to the status summarized in previous review articles [1], [2]. A number of new concepts for trimming the basic physical equations to the requirements of a power semiconductor device model for circuit simulation have been proposed [42], [43], [53], [69], [75], [101], [117], [119], [122], [129], [134], [140]. The special challenge in developing such models for circuit simulation results from the need to simultaneously fulfill contradicting requirements like high quantitative accuracy, low demand of computation power, and physical and easy accessible model parameters.…”

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confidence: 99%

Status and trends of power semiconductor device models for circuit simulation

Kraus

Mattausch

1998

IEEE Trans. Power Electron.

110

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Abstract-The current status of research in the field of power semiconductor device models is reviewed. For this purpose, the basic modeling problems and research issues, which have to be overcome in this field, are discussed. Recently, some new and quite promising modeling concepts have been proposed, which are compared with more traditional ways of achieving an efficient tradeoff between the necessary accuracy, required simulation speed, and feasibility of parameter determination. From this comparison, a prediction of the future evolution of circuit simulation models for power semiconductor devices naturally emerges. Many of the different concepts are expected to survive only in an application niche, where their specific points of strength are important. However, three modeling concepts have already been proven to be successfully applicable to the complete spectrum of power semiconductor devices and have their strength for different grades of complexity of the power circuit. A revolutionary development from anticipated or longdue breakthroughs is on the other hand not expected in the foreseeable future.

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“…Although it is adequate for most circuit simulations model is inadequate for predicting dynamic carrier distribution [6]. Goebel [7] and Metzner et al [2] developed hybrid models where carrier distribution is calculated by a numerical routine that is linked to circuit simulator. With this approach it is possible to achieve accurate results (typical of numerical models) but model implementation becomes a hard task [5,6].…”

Section: Introductionmentioning

confidence: 99%