2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting 2009
DOI: 10.1109/bipol.2009.5314153
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A two-channel, ultra-low-power, SiGe BiCMOS receiver front-end for X-band phased array radars

Abstract: We present an ultra-low-power SiGe BiCMOS receiver front-end for X-band phased-array radar systems. The receiver, which consists of two LNAs and a 3-bit phase shifter, consumes only 4 mW of dc power while achieving over 10 dB of gain, less than 5 dB noise figure, and an OTOI of over 10 dBm. In addition, the RMS gain and phase errors were less than 0.5 dB and 2 • , respectively. This design demonstrates possible applications of SiGe HBT technology for use in ultra-low-power radar systems.

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Cited by 10 publications
(6 citation statements)
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“…It is matched to 50 at all RF ports on chip, thus no matching network is needed on package. A more comprehensive description of the full phase shifter can be found in [17].…”
Section: B Phase Shifter Circuit Descriptionmentioning
confidence: 99%
See 1 more Smart Citation
“…It is matched to 50 at all RF ports on chip, thus no matching network is needed on package. A more comprehensive description of the full phase shifter can be found in [17].…”
Section: B Phase Shifter Circuit Descriptionmentioning
confidence: 99%
“…S-parameters of the packaged PS were taken using the same measurement setup and biased according to the specifications in [17]. Measurement comparisons of the bare PS versus the packaged PS are shown in Fig.…”
Section: E Ps Measurementsmentioning
confidence: 99%
“…In recent years, several phase shifter architectures have been proposed that make use of on-chip waveguide transformers, allowing for a constant phase shift distribution across the network. Even though these approaches have produced largely successful results, they are only able to work at X-band and above due to the necessary on-chip wave transformers [1,2]. Additionally, effective approaches have demonstrated integrated RF phase shifters at K band and U band with the use of novel architectures that take advantage of on-chip matching structures.…”
Section: Introductionmentioning
confidence: 99%
“…Details of the LNA and PS are discussed in [8] and [9], respectively. Each component was first packaged individually on LCP and characterized.…”
Section: Sige Chip Packaging and Integrationmentioning
confidence: 99%