A trench-gate injection enhanced lateral IEGT on SOI

Matsudai, Tomoko; Kitagawa, M.; Nakagawa, Akio

doi:10.1109/ispsd.1995.515024

Cited by 21 publications

(2 citation statements)

References 3 publications

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“…MSA [15] Latch up triggered Latch up suppressed Conv. [9] MSAI [15] SEG-LTIGBT SSA-LTIGBT SBM [8] STA [16] SAR [21] 38.6% 55%…”

Section: Discussionmentioning

confidence: 99%

A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure

Wang¹,

Wei²,

Fan³

et al. 2020

J. Semicond.

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A novel 600 V snapback-free high-speed silicon-on-insulator lateral insulated gate bipolar transistor is proposed and investigated by simulation. The proposed device features an embedded NPN structure at the anode side, and double trenches together with an N-type carrier storage (N-CS) layer at the cathode side, named DT-NPN LIGBT. The NPN structure not only acts as an electron barrier to eliminate the snapback effect in the on-state within a smaller cell pitch but also provides an extra electron extracting path during the turn-off stage to decrease the turnoff loss (E off). The double cathode trenches and N-CS layer hinder the hole from being extracted by the cathode quickly. They then enhance carrier storing effect and lead to a reduced on-state voltage drop (V on). The latch-up immunity is improved by the double cathode trenches. Hence, the DT-NPN LIGBT obtains a superior tradeoff between the V on and E off. Additionally, the DT-NPN LIGBT exhibits an improved blocking capability and weak dependence of breakdown voltage (BV) on the P+ anode doping concentration because the NPN structure suppresses triggering the PNP transistor. The proposed LIGBT reduces the E off by 55% at the same V on, and improves the BV by 7.3% compared to the conventional LIGBT.

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“…MSA [15] Latch up triggered Latch up suppressed Conv. [9] MSAI [15] SEG-LTIGBT SSA-LTIGBT SBM [8] STA [16] SAR [21] 38.6% 55%…”

Section: Discussionmentioning

confidence: 99%

A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure

Wang¹,

Wei²,

Fan³

et al. 2020

J. Semicond.

View full text Add to dashboard Cite

show abstract

“…As a result, extensive research has been conducted to analyze the phenomena associated with IGBT turn-off switching. [15][16][17][18][19] In designing for overall system performance, the IGBT must be optimized with not only low loss but also high reliability and low noise. [20][21][22][23][24][25][26] In previous studies, although turn-off switching characteristics have been analyzed for each new generation device to clarify switching behavior with carrier dynamics, the design direction to address both low loss and low surge voltage has not been sufficiently discussed.…”

Section: Introductionmentioning

confidence: 99%

Turn-off switching voltage surge analysis with dependence on IGBT cell design

Fujimoto,

Nishizawa,

Saito

2024

Jpn. J. Appl. Phys.

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Surge voltage at IGBT turn-off switching was analyzed with dependence on cell design parameters. Although drift layer thinning is effective to improve trade-off characteristics between turn-off loss Eoff and on-state voltage Von, voltage surge is induced due to quick expanding depletion layer. Therefore, the surge voltage Vsurge has also trade-off relationship with the Von at the same Eoff condition. The origin of voltage surge was analyzed using TCAD simulation, and total amount of remained holes in the drift layer during turn-off switching is a key factor for the Vsurge. Narrow mesa structure and thick buffer layer are effective for improvement of trade-off characteristics between Vsurge and Von. However, the optimum buffer layer thickness depends on the voltage-class due to the speed for punch through.

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Comprehensive study on the VGE overshoot during the turn-on operation for the IEGT

Yang

Zhu

et al. 2014

Superlattices and Microstructures

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A trench-gate injection enhanced lateral IEGT on SOI

Cited by 21 publications

References 3 publications

A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure

A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure

Turn-off switching voltage surge analysis with dependence on IGBT cell design

Comprehensive study on the VGE overshoot during the turn-on operation for the IEGT

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