A Traveling-Wave CMOS SPDT Using Slow-Wave Transmission Lines for Millimeter-Wave Application

mm-Wave Single-Pole Double-Throw switches: HBT- vs MOSFET-based designs

“…The reduced footprint is achieved thanks to the use of the slow-wave TLines, as stated before. In addition, a close study of the literature shows that the largest RBW are reported by SPDT switches using slow-wave TLines [7], [11]. The results summarized in this table show that the HBT-based architecture reported a nearly 10% reduction on the insertion loss and a 37% increase in the isolation, when compared to the MOSFET-based architecture.…”

“…Even though, in this architecture, the transistor is the main contributor to the overall performance, the quarterwavelength TLine still plays a non-negligible role. Hence, high-Quality-factor ( 𝑄𝑄 -factor) TLines are necessary to improve the characteristics of the SPDT switch [7], [11]. Also, as the aim of this work is to analyze the trade-offs of using HBTs or MOSFETs of the same process flow, the impact of the TLines must be reduced to maximally reveal the effects of the transistor performance.…”

“…In fact, thanks to the technological leaps achieved by semiconductor foundries in the recent years, SPDTs have been reported up to practically the end of the mm-Wave band (i.e., up to 285 GHz) in silicon-based technologies [5]. In addition, active competition in the literature can be observed between approaches reporting the use of Heterojunction Bipolar Transistors (HBT) [6], [7] and the use of MOSFETs [5], [8]- [11]. However, to the best of authors' knowledge, a thorough analysis of the literature reveals that a clear comparison between MOSFETs and HBTs for the fabrication of mm-Wave SPDTs in the same technology node has never been reported.…”

A compact low insertion loss Ka‐band GaAs MMIC traveling wave switch with absorptive characteristic

“…The ON‐state and OFF‐state switch are biased at V g = 0 and − 5 V, respectively. The used transmission lines with the electrical length less than 90°, in the proposed switch topology, can be simplified into a lumped unit model 7 …”

“…The high standing wave can be obtained by applying series–parallel structure, but the series transistor will enhance the insertion loss, and also be limited by the output power. While the traveling wave structure can effectively improve the isolation and reduce the insertion loss, 7–14 and the power tolerance is also higher comparing with it. However, the return loss performance of isolation port is not satisfying for the traveling wave structure.…”