A compact low insertion loss Ka‐band GaAs MMIC traveling wave switch with absorptive characteristic

Abstract

In this articel, a compact single‐pole double‐throw traveling wave switch is proposed and fabricated using 0.15 μm‐pHEMT GaAs technology. The switch obtained an insertion loss less than 2 dB, and the isolation is better than 28 dB in the core passband. The excellent return losses performances at all the ports are good obtained especially for the isolation port from 30 to 40 GHz. The return losses of isolated port is better than around 5 dB. To demonstrate the design conception, a prototype of the proposed switch is fabricated with a size of 0.97 × 0.77 mm2 including all the pads. There is a good agreement between the simulated and measured results. To the best of our knowledge, this is the neoteric GaAs MMIC traveling‐wave switch topology with the good absorptive characteristic.