Abstract:In this articel, a compact single‐pole double‐throw traveling wave switch is proposed and fabricated using 0.15 μm‐pHEMT GaAs technology. The switch obtained an insertion loss less than 2 dB, and the isolation is better than 28 dB in the core passband. The excellent return losses performances at all the ports are good obtained especially for the isolation port from 30 to 40 GHz. The return losses of isolated port is better than around 5 dB. To demonstrate the design conception, a prototype of the proposed swit… Show more
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