A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si

Mechanism of the Smart Cut™ layer transfer in silicon by hydrogen and helium coimplantation in the medium dose range J. Appl. Phys. 97, 083527 (2005) We report on the microstructure of silicon coimplanted with hydrogen and helium ions at moderate energies. X-ray diffraction investigations in as-implanted samples show the direct correlation between the lattice strain and implanted ion depth profiles. The measured strain is examined in the framework of solid mechanics and its physical origin is discussed. The microstructure evolution of the samples subjected to intermediate temperature annealing ͑350°C͒ is elucidated through transmission electron microscopy. Gas-filled cavities in the form of nanocracks and spherical bubbles appear at different relative concentration, size, and depth location, depending on the total fluence. These different microstructure evolutions are connected with the surface exfoliation behavior of samples annealed at high temperature ͑700°C͒, determining the optimal conditions for thick layer transfer. 1.5 m thick Si films are then obtained onto glass substrates.

Section: Introductionmentioning

confidence: 99%

On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies

Reboh

Schaurich

Declémy

et al. 2010

“…10 Figure 1 summarizes the results we obtained when measuring the time needed for the splitting of the layers during annealing at various temperatures for H-only and He+ H sequentially implanted Si and SiGe samples. In agreement with our previous report 9 for H-only implants, splitting is significantly slower in SiGe than in Si.…”

Section: Methodsmentioning

confidence: 99%

Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H

Nguyen

Bourdelle

Aulnette

et al. 2008

Self Cite

We have performed systematic measurements of the splitting kinetics induced by H-only and He + H sequential ion implantation into relaxed Si 0.8 Ge 0.2 layers and compared them with the data obtained in Si. For H-only implants, Si splits faster than Si 0.8 Ge 0.2 . Sequential ion implantation leads to faster splitting kinetics than H-only in both materials and is faster in Si 0.8 Ge 0.2 than in Si. We have performed secondary ion mass spectrometry, Rutherford backscattering spectroscopy in channeling mode, and transmission electron microscopy analyses to elucidate the physical mechanisms involved in these splitting phenomena. The data are discussed in the framework of a simple phenomenological model in which vacancies play an important role.

“…In addition to thermal relaxation of layers and intermixing at the interfaces, the processes that are operative during neutral-only exposure will be defect density thermal equilibration and H-atom induced hydrogenation of a-Si and crystallization to µc-Si:H. The combination of these effects is sufficient to account for the observed temperature dependencies. 48,49 .…”

Section: Effects Of Texposurementioning

confidence: 99%

Temperature dependencies of hydrogen-induced blistering of thin film multilayers

Kuznetsov

Gleeson

Bijkerk

2014

We report on the influence of sample temperature on the development of hydrogen-induced blisters in Mo/Si thin-film multilayers. In general, the areal number density of blisters decreases with increasing exposure temperature, whereas individual blister size increases with exposure temperatures up to ~200 °C but decreases thereafter. Comparison as a function of sample temperature is made between exposures to a flux containing both hydrogen ions and neutrals and one containing only neutrals. In the case of the neutral-only flux, blistering is observed for exposure temperatures ≥90 °C. The inclusion of ions promotes blister formation at <90 °C, while retarding their growth at higher temperatures. In general, ioninduced effects become less evident with increasing exposure temperature. At 200 °C the main effect discernable is reduced blister size as compared with the equivalent neutral-only exposure. The temperature during exposure is a much stronger determinant of the blistering outcome than either pre-or post-annealing of the sample. The trends observed for neutralonly exposures are attributed to competing effects of defect density thermal equilibration and H-atom induced modification of the Si layers. Energetic ions modify the blistering via (temperature dependent) enhancement of H-mobility and re-crystallization of amorphous Si.