A transistorized Marx bank circuit providing sub-nanosecond high-voltage pulses

N., V.; Shukla, Mayank; Khardekar, R. K.

doi:10.1088/0957-0233/5/4/020

Cited by 30 publications

(8 citation statements)

References 7 publications

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“…The high voltage drivers based on the MOSFETs connected in series provide the laser beam modulation frequency up to 1 MHz with the 30 ns rise/fall time of pulse and adjustable pulse width [22][23][24][25][26][27]. The bipolar avalanche high voltage drivers allow us to achieve rise time from 7 ns down to 240 ps [28][29][30][31][32][33][34][35]. However, the fall time of the pulse generated by the bipolar avalanche high voltage drivers may be 10 times longer than the rise time of the pulse.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Piezoelectric Ringing Frequency Response of Beta Barium Borate Crystals

Sinkevičius

Bielskis

2019

Crystals

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The piezoelectric ringing phenomenon in Pockels cells based on the beta barium borate crystals was analyzed in this work. The investigation results show that piezoelectric ringing is caused by multiple high voltage pulses with a frequency in the range from 10 kHz up to 1 MHz. Experimental investigation of frequency response and Discrete Fourier transformation was used for analysis. The method of piezoelectric ringing investigation based on the analysis of difference of real and simulated optical signals spectrums was proposed. The investigations were performed for crystals with 3 × 3 × 25 mm, 4 × 4 × 25 mm and 4 × 4 × 20 mm dimensions. It was estimated that piezoelectric ringing in the beta barium borate crystal with dimensions of 3 × 3 mm × 25 mm occurred at the 150, 205, 445, 600 and 750 kHz frequencies of high voltage pulses.

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Section: Introductionmentioning

confidence: 99%

Investigation of Piezoelectric Ringing Frequency Response of Beta Barium Borate Crystals

Sinkevičius

Bielskis

2019

Crystals

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“…This requires an account of 2-D effects, and can be proved by precise comparison of simulated collector voltage waveforms with those measured in the circuit shown in Fig. 1(b) (possible physical mechanisms responsible for another puzzle, namely, the subnanosecond switching observed in Marx generators [2], [4], can also be suggested based on the results presented in the following).…”

Section: Introductionmentioning

confidence: 95%

“…In particular, interesting from both a physical and a practical point of view is the realization of extremely fast subnanosecond/picosecond (ps) switching [2], [4], given that under ordinary conditions (base-triggering), a single transistor with a base-collector breakdown of ∼300 V will only allow switching time to be as long as 2-3 ns. To the best of our knowledge, this physical puzzle (picosecond switching of nanosecond-speed avalanche transistors) remains unresolved.…”

Section: Introductionmentioning

confidence: 99%

Switching Mechanisms Triggered by a Collector Voltage Ramp in Avalanche Transistors With Short-Connected Base and Emitter

Vainshtein

Duan

Filimonov

et al. 2016

IEEE Trans. Electron Devices

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Although Marx-bank connection of avalanche transistors is widely used in applications requiring high-voltage nanosecond and subnanosecond pulses, the physical mechanisms responsible for the voltage-ramp-initiated switching of a single transistor in the Marx chain remain unclear. It is shown here by detailed comparison of experiments with physical modeling that picosecond switching determined by double avalanche injection in the collector-base diode gives way to formation and shrinkage of the collector field domain typical of avalanche transistors under the second breakdown. The latter regime, characterized by a lower residual voltage, becomes possible despite a shortconnected emitter and base, thanks to the 2-D effects.Index Terms-Avalanche transistor, device phenomenon, experiment and physical modeling, high-speed avalanche switching, Marx generators.

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“…Rai et al [13] designed a transistorized Marx bank circuit that provides ∼4-kV amplitude pulse just with an ultrashort rise time of <1 ns. Pavitra Krishnaswamy (2007) [14] designed a series arrangement of avalanche transistorized circuits based on a tapered transmission line with 0.8-ns rise time, 1.3-ns width, and 1.1-kV pulse on 50-load.…”

Section: Introductionmentioning

confidence: 99%

Development and Simulation of a Compact Picosecond Pulse Generator Based on Avalanche Transistorized Marx Circuit and Microstrip Transmission Theory

Zhang

Yao

et al. 2016

IEEE Trans. Plasma Sci.

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The new biological effect of picosecond pulsed electric fields (psPEFs) has elicited the interest of researchers. A pulse generator based on an avalanche transistorized Marx circuit has been proposed. However, the problem of reflection in the transmission of the generated picosecond pulse based on this circuit has not received much attention and remains unresolved. In this paper, a compact picosecond pulse generator based on microstrip transmission theory was developed. A partial matching model based on microstrip transmission line theory was also proposed to eliminate reflection, and a series inductor was utilized to optimize pulse waveform. Through simulation studies and preliminary experimental tests, a pulse optimized with 1015 V amplitude, 620-ps width, and 10-kHz high stability repetition rate was generated. This pulse generator can be used with microelectrodes in cell experiments to explore the biological effect mechanism of psPEF.

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A transistorized Marx bank circuit providing sub-nanosecond high-voltage pulses

Abstract: An improved version of a Maw bank circuit has been developed using 2N5551/2N5550 transistots as switching elements in avalanche mode which provides a negative pulse of about 4 kV amplitude and <1 ns rise time. The circuit has about 14 ns delay and 4 1 ns jitter.

Cited by 30 publications

References 7 publications

Investigation of Piezoelectric Ringing Frequency Response of Beta Barium Borate Crystals

Investigation of Piezoelectric Ringing Frequency Response of Beta Barium Borate Crystals

Switching Mechanisms Triggered by a Collector Voltage Ramp in Avalanche Transistors With Short-Connected Base and Emitter

Development and Simulation of a Compact Picosecond Pulse Generator Based on Avalanche Transistorized Marx Circuit and Microstrip Transmission Theory

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