A transient model for insulated gate bipolar transistors (IGBTs)

Ryu, Sehwan; Lee, Myung‐Soo; Hajji, Mohsen A.; Ahn, Hyungkeun; Han, Deuk-Young; Nokali, M. El

doi:10.1080/00207210801996162

Cited by 8 publications

(2 citation statements)

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“…In the present study, an excess carrier lifetime extraction method for physics-based IGBT models is is proposed on the basis of the latest development in IGBT modeling theory [4], [5]. The Sentaurus simulation is used to validate the proposed method.…”

Section: Introductionmentioning

confidence: 99%

“…Although many works have explored lifetime extraction [7]- [19], most of them use the extraction theory cited in [7] to extract excess carrier lifetime for NPT IGBT models, as well as the extraction theory cited in [17] to extract excess carrier lifetime for PT or FS IGBT models. Since the significant development of IGBT transient modeling theory, especially the availability of the newly proposed expression for the transient dynamics of excess carrier distribution in the N-base [4] and the improved understanding of the transient modeling of FS layers [5], extraction methods should be modified to meet the latest developments. Moreover, many existing studies validated their extraction methods by comparing the experimental and simulated characteristics of IGBTs at static and transient states.…”

Section: Introductionmentioning

confidence: 99%

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An Excess Carrier Lifetime Extraction Method for Physics-based IGBT Models

Fu¹,

Xue²

2016

Journal of Power Electronics

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An excess carrier lifetime extraction method is derived for physics-based insulated gate bipolar transistor (IGBT) models with consideration of the latest development in IGBT modeling. On the basis of the 2D mixed-mode Sentaurus simulation, the clamp turn-off test is simulated to obtain the tail current. The proposed excess carrier lifetime extraction method is then performed using the simulated data. The comparison between the extracted results and actual lifetime directly obtained from the numerical device model precisely demonstrates the accuracy of the proposed method.

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Section: Introductionmentioning

confidence: 99%