A transformer of one-third wavelength in two sections - for a frequency and its first harmonic

Chow, Y.L.; Wan, K.L.

doi:10.1109/7260.975723

Cited by 100 publications

(52 citation statements)

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“…Therefore, it is quite essential to study and develop multi-band PAs. In 2002, Chow and Wan proposed a two-section 1/3-wavelength transformer line operating at the fundamental frequency and its first harmonic frequency [1], which propels the evolution of dual-band impedance transforming. Then the structure was enhanced in order to operate at two independent frequencies [2].…”

Section: Introductionmentioning

confidence: 99%

Design of a Dual-Band Doherty Power Amplifier Utilizing Simplified Phase Offset-Lines

Zheng¹,

Liu²,

Chen³

et al. 2014

PIER C

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Abstract-This paper proposes a novel design methodology for dual-band Doherty power amplifier (DPA) with simplified offset-lines. The methodology is validated with the design and fabrication of a 10 W GaN based DPA for Global System for Mobile Communications (GSM) and Wideband Code Division Multiple Access (WCDMA) applications at 0.90 GHz and 2.14 GHz, respectively. In the measurement results, the DPA achieves a drain efficiency (DE) of 51.2% with an output power of 37.2 dBm at the 6.5 dB output power back-off (OBO) from the saturated output power at 0.90 GHz, and a DE of 39.9% with an output power of 37.4 dBm at the 6.5 dB OBO at 2.14 GHz. Linearity results using 20 MHz 16 QAM signal show an adjacent channel leakage ratio (ACLR) of −48 dBc and −43 dBc with the average output power of 37.2 dBm and 37 dBm at 0.90 GHz and 2.14 GHz, respectively.

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Section: Introductionmentioning

confidence: 99%

Design of a Dual-Band Doherty Power Amplifier Utilizing Simplified Phase Offset-Lines

Zheng¹,

Liu²,

Chen³

et al. 2014

PIER C

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“…At first, we apply our method and obtain the characteristic impedance values reported in Table 1(b). Then, we perturb these impedance values following equation (9), and compute the power P L delivered to the load considering the corresponding propagation constants given by equation (10).…”

Section: Representative Resultsmentioning

confidence: 99%

“…On the other hand, in many cases of practical interest (cellular/PCS, WLAN, GSM/DCS and other dual-band applications [6][7][8][9]) impedance matching over two separate bands can be required. So, in the last years various design methods for dual-band impedance transformers have been proposed [10][11][12][13][14]. In particular, the synthesis problem of a dual-band two-section one-third wavelength transformer with the two bands centered at a given frequency f 1 and at its first harmonic 2f 1 is dealt with in [10] and [11].…”

Section: Introductionmentioning

confidence: 99%

“…So, in the last years various design methods for dual-band impedance transformers have been proposed [10][11][12][13][14]. In particular, the synthesis problem of a dual-band two-section one-third wavelength transformer with the two bands centered at a given frequency f 1 and at its first harmonic 2f 1 is dealt with in [10] and [11]. The more general problem of designing a transformer working in two bands centered at two arbitrary frequencies is solved in [12] and [13], but only for a two-section transformer.…”

Section: Introductionmentioning

confidence: 99%

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An Exact Synthesis Method for Dual-Band Chebyshev Impedance Transformers

Castaldi¹,

Fiumara²,

Gallina³

2008

PIER

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Abstract-We propose an exact synthesis method which allows the design of dual-band transformers with an arbitrary even number of uniform sections giving equi-ripple impedance matching in two separate bands centered at two arbitrary frequencies. This method is a generalization of the exact Collin-Riblet synthesis of Chebyshev single-band transformers. As compared to a single-band Collin-Riblet transformer encompassing both required passbands, the proposed design yields significantly better performance in terms of passband tolerance and width.

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“…Earlier reported distributed designs such as dual-band Chebyshev impedance transformer [10,11], dual frequency transformer [9] and two-section 1/3-wavelength transmission line based transformer [8] are extremely useful for matching real load and source impedances. However, these designs are not able to provide matching when the load impedances are complex and frequency-dependent as is the case with a generic dual-band amplifier where the transistor may possess two different complex impedances (Z L ) at two different frequencies as depicted in Figure 1(b).…”

Section: Introductionmentioning

confidence: 99%

A T-Section Dual-Band Matching Network for Frequency-Dependent Complex Loads Incorporating Coupled Line With Dc-Block Property Suitable for Dual-Band Transistor Amplifiers

Maktoomi¹,

Hashmi²,

Ghannouchi³

2014

PIER C

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Abstract-This paper reports design of a new dual-band T-type impedance transformer also exhibiting DC-blocking feature. The design aims at achieving matching for frequency-dependent complex loads having distinct values at two arbitrary frequencies to Z s (here, 50 Ω). A step-wise analysis on the developed dual-band impedance transformer provides simple closed-form design equations. The design is verified by simulation in Agilent ADS. For experimental verification a PCB prototype is fabricated using FR-4 material, operating at 1.45 GHz and 2.61 GHz. A good result is obtained confirming the theory and simulation.

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A transformer of one-third wavelength in two sections - for a frequency and its first harmonic

Cited by 100 publications

References 0 publications

Design of a Dual-Band Doherty Power Amplifier Utilizing Simplified Phase Offset-Lines

Design of a Dual-Band Doherty Power Amplifier Utilizing Simplified Phase Offset-Lines

An Exact Synthesis Method for Dual-Band Chebyshev Impedance Transformers

A T-Section Dual-Band Matching Network for Frequency-Dependent Complex Loads Incorporating Coupled Line With Dc-Block Property Suitable for Dual-Band Transistor Amplifiers

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