A time-resolved near-infrared spectroscopy based on CMOS image sensor

Lioe, De Xing; Hakamata, Masashi; Yasutomi, Keita; Kagawa, Keiichiro; Niwayama, Masatsugu; Fukushi, Yasuko; Yamamoto, Seiji; Kawahito, Shoji

doi:10.1117/12.2545581

Cited by 1 publication

(2 citation statements)

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“…One set of phase shifting is configured to be 160 frames and repeated multiple times to obtain the average. Phase shifting of light pulse using PLL from FPGA is more efficient than using a discrete delay controller [14], [15] and consequently realizing a smaller system. In this demonstration, 160 frames are captured to show the overall response of the time window.…”

Section: B Principles Of Nirs Measurementmentioning

confidence: 99%

“…SPAD-based methods usually suffer from either having a limited area or ineffective gating. A pinned photodiode (PPD)-based CIS has also been developed to realize timeresolved sensing [13], [14], [15], [16]; however, the intrinsic response and sensitivity at the near-infrared region are not sufficient for the TR-NIRS. Intrinsic response in the order of a few hundred picoseconds is desired to obtain meaningful information [17], [18].…”

Section: Introductionmentioning

confidence: 99%

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A CMOS Lock-In Pixel Image Sensor With Multisimultaneous Gate for Time-Resolved Near-Infrared Spectroscopy

Lioe

Fukushi

Hakamata

et al. 2023

IEEE Trans. Electron Devices

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This article proposes a CMOS lock-in pixel image sensor aiming for time-resolved near-infrared spectroscopy (TR-NIRS). The pixel employs lateral electric field charge modulation (LEFM) with an eight-tap multisimultaneous gate structure and negative substrate bias. The optimization of pixel structure creates a high potential slope with no barrier to facilitate the high-speed photo-generated charge transfer required in the time-resolved application. The sensor employs a two-stage charge transfer architecture with pinned storage diodes (SDs). The effectiveness of the sensor is demonstrated through simulations and experimental measurements. A prototype sensor with 70 (V) × 110 (H) effective pixels to characterize the multisimultaneous gate lock-in pixel is implemented in a 0.11-µm 1-poly-4metal CMOS image sensor (CIS) technology. A fast intrinsic response of 240 ps is achieved using an 80-ps pulsewidth 780-nm laser diode by the characterization using two simultaneous gates and a single time window of the lock-in pixel.

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Section: B Principles Of Nirs Measurementmentioning

confidence: 99%