A Thorough Reconsideration of in‐situ Doping Theory of Epitaxial Silicon Layers

Abstract

The adsorption-desorption limited doping mechanism as suggested by REIF and DIITTON to explain in-situ doping of epitaxial CVD silicon layer will thoroughly be discussed in comparison to the more general transport-reaction limited mechanism as originally suggested by SHEPERD. Distinctive and common features will be highlighted and discussed with respect to composite layer growth.