A thorough investigation of MOSFETs NBTI degradation

Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation

“…Therefore, a = pε int = 0.6−1.2q Å. In other words, when the Si-H bond is placed in an electric field, applied opposite to the polarization 5 Similar charge transfer is also calculated in [46] based on Sanderson's scale. vector (which is the field polarity for NBTI stress), its energy will be increased by pE loc = pε int E ox = aE ox .…”

“…The corresponding ionic bond energy U H−Si = 1.3(x Si − x H ) 2 = 0.1 eV allows one to estimate the effective charge transfer within Si-H dipole, i.e., √ (4πε 0 rU H−Si ) = 0.1q [43], [45], where q is the electron charge, and r is the Si-H bond length (∼ 1.5 Å). 5 The resultant dipole moment in Si-H bond is p = 0.15q Å. Considering that the Si-H dipole resembles a dipolar orientation normal to a thin slab, the local electric field [47] is given by E loc = (1 + Lχ int )E ox = ε int E ox = (3.9 − 8)E ox , where L = 1 (depolarization factor [47]), χ int is the dielectric susceptibility at interface, and ε int is the dielectric permittivity (relative) at interface having values approximately 3.9 (SiO 2 ) to 8 (average of SiO 2 and Si) [48].…”

“…1) Some suggest that NBTI is primarily a phenomenon of (dispersive) hole trapping (for all devices), and any contribution from ∆N IT , if present, is small [28], [30]. 2) Both hole trapping and ∆N IT are present; however, ∆N IT involves (dispersive) reaction-limited generation of interface traps [5], [32]. 3) Others believe that hole trapping saturates very quickly (approximately tens of milliseconds), and any subsequent shift in ∆V T reflects diffusion-limited generation of interface traps within the R-D framework [19].…”

On the frequency dependence of the bias temperature instability

“…While all studies report a duty-factor dependence following the ubiquitous step-shaped curve [1,2,[5][6][7][8], the frequency dependence of BTI appears to be controversial: particularly older studies using slow measurements report frequency independent behavior [1,9,10], while more recent studies have revealed a frequency dependent contribution [3,[11][12][13][14][15][16][17][18][19][20]. We study the duty-factor and frequency dependence in the light of the recently proposed capture/emission time (CET) map model [7,[21][22][23] and demonstrate that the recoverable component of BTI can only to the first-order be captured by a two-state defect model.…”

Reliability characterization of silicon-based germanium waveguide photodetectors

“…In order to maintain the 10-year lifetime of the Ge waveguide photodetector, the moderate bias voltage should be kept lower than −3 V. The dark current degradation mechanism was also explained in detail based on the reaction-diffusion (RD) model, which is often used to characterize the negative bias temperature instability (NBTI) effects in metal oxide semiconductor field effect transistors (MOSFETs). 10 …”