A thermomechanical study of the electrical resistance of Cu lead interconnections

Liu, D. S.; Chen, C. Y.; Chao, Y. C.

doi:10.1007/bf02692554

Cited by 3 publications

(4 citation statements)

References 13 publications

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“…For 200 MPa, which corresponds to 120% of the yield strength, we observed a 14% increase in resistance (∆R/R). The shape of this curve is in agreement with that obtained in [6] for a single strand of aluminum. This result can be considered, therefore, as an electrical loading curve, analogous to the mechanical stress-strain curve where we can clearly visualize the "elastic" electrical area and the "plastic" one.…”

Section: Results Of the Electrical Modelsupporting

confidence: 88%

“…The movement and creation of dislocations, therefore, change the mechanical behavior of the metallic material, as well as its physical properties (e.g., electrical, thermal, etc.) [6].Energies 2018, 11, x FOR PEER REVIEW 2 of 11 in the crystal lattice of the metal progressively decrease both electrical and thermal transport [5]. The movement and creation of dislocations, therefore, change the mechanical behavior of the metallic material, as well as its physical properties (e.g., electrical, thermal, etc.)…”

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confidence: 99%

“…The movement and creation of dislocations, therefore, change the mechanical behavior of the metallic material, as well as its physical properties (e.g., electrical, thermal, etc.) [6].…”

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confidence: 99%

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On-Coupling Mechanical, Electrical and Thermal Behavior of Submarine Power Phases

Matine¹,

Drissi‐Habti²

2019

Energies

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Floating offshore renewable energies (OREs), such as offshore floating wind turbines (wind energy) or wave power (wave and wave energy), are increasingly in demand. Submarine cables that transmit the energy produced from offshore farms all the way to onshore stations are critical structures that must be able to work perfectly over 20 years without any maintenance. In order to reduce the significant costs associated with electrical cables, it is important to optimize the dimensioning of the components of these cables, or to develop structural monitoring techniques that target zero and/or minimum maintenance over their lifespan. In this paper, we FEM of the impact of damage mechanisms of the conductor part of a submarine power phase on its mechanical, electrical, and thermal behavior. The main damage mechanisms are local plasticity and wire failure. The first mechanical study made it possible to obtain the elasto-plastic behavior of the conductor. The electrical study took into consideration the deformed geometry of the conductor in the elasto-plastic domain, as well as the non-homogeneous distribution of the electrical conductivity of the conductor. Their influence on the electrical resistance of the conductor was then analyzed. Finally, we studied the impact of plasticity and conductor failure on the thermal behavior of the phase. The temperature differences obtained in the numerical analysis of this work may be used further to help preventive and curative maintenance of the cables, for example, by using an optical fiber as sensor for structural health monitoring.

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Section: Results Of the Electrical Modelsupporting

confidence: 88%

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confidence: 99%

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On-Coupling Mechanical, Electrical and Thermal Behavior of Submarine Power Phases

Matine¹,

Drissi‐Habti²

2019

Energies

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“…Microelectronics packaging is an essential part of the microelectronics industry, which is one of the pillar industries in countries all over the world. The common chip interconnect technologies in microelectronic packaging include wire bonding [ 1 , 2 ], flip-chip bonding [ 3 , 4 ], tape automated bonding (TAB) [ 5 , 6 ], etc. Wire bonding has been the most cost-effective, mature, and flexible interconnect technology in microelectronic packaging since its invention in the 1960s, which is still used to assemble more than 80% semiconductor packages in the microelectronic packaging industry [ 7 , 8 ].…”

Section: Introductionmentioning

confidence: 99%

Research Progress on Bonding Wire for Microelectronic Packaging

et al. 2023

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Wire bonding is still the most popular chip interconnect technology in microelectronic packaging and will not be replaced by other interconnect methods for a long time in the future. Au bonding wire has been a mainstream semiconductor packaging material for many decades due to its unique chemical stability, reliable manufacturing, and operation properties. However, the drastic increasing price of Au bonding wire has motivated the industry to search for alternate bonding materials for use in microelectronic packaging such as Cu and Ag bonding wires. The main benefits of using Cu bonding wire over Au bonding wire are lower material cost, higher electrical and thermal conductivity that enables smaller diameter Cu bonding wire to carry identical current as an Au bonding wire without overheating, and lower reaction rates between Cu and Al that serve to improve the reliability performance in long periods of high temperature storage conditions. However, the high hardness, easy oxidation, and complex bonding process of Cu bonding wire make it not the best alternative for Au bonding wire. Therefore, Ag bonding wire as a new alternative with potential application comes to the packaging market; it has higher thermal conductivity and lower electric resistivity in comparison with Cu bonding wire, which makes it a good candidate for power electronics, and higher elastic modulus and hardness than Au bonding wire, but lower than Cu bonding wire, which makes it easier to bond. This paper begins with a brief introduction about the developing history of bonding wires. Next, manufacturability and reliability of Au, Cu, and Ag bonding wires are introduced. Furthermore, general comparisons on basic performance and applications between the three types of bonding wires are discussed. In the end, developing trends of bonding wire are provided. Hopefully, this review can be regarded as a useful complement to other reviews on wire bonding technology and applications.

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Microstructural Characteristics of Electro-Plated Cu Films by DC and Pulse Systems

윤지숙¹,

박찬수²,

홍순현³

et al. 2014

Korean. J. Mater. Res.

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The aim of this work was to investigate the effects of electrodeposition conditions on the microstructural characteristics of copper thin films. The microstructure of electroplated Cu films was found to be highly dependent on electrodeposition conditions such as system current and current density, as well as the bath solution itself. The current density significantly changed the preferred orientation of electroplated Cu films in a DC system, while the solution itself had very significant effects on microstructural characteristics in a pulse-reverse pulse current system. In the DC system, polarization at high current above 30 mA, changed the preferred orientation of Cu films from (220) to (111). However, Cu films showed (220) preferred orientation for all ranges of current density in the pulse-reverse pulse current system. The grain size decreased with increasing current density in the DC system while it remained relatively constant in the pulse-reverse pulse current system. The sheet resistance increased with increasing current density in the DC system due to the decreased grain size.

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A thermomechanical study of the electrical resistance of Cu lead interconnections

Cited by 3 publications

References 13 publications

On-Coupling Mechanical, Electrical and Thermal Behavior of Submarine Power Phases

On-Coupling Mechanical, Electrical and Thermal Behavior of Submarine Power Phases

Research Progress on Bonding Wire for Microelectronic Packaging

Microstructural Characteristics of Electro-Plated Cu Films by DC and Pulse Systems

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