2014
DOI: 10.1109/ted.2014.2320966
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A Theory of Multiplication Noise for Electron Multiplying CMOS Image Sensors

Abstract: An electron multiplying CMOS images sensor (emCMOS) enables electron multiplication inside the pixel by the use of high voltage (hv) phase(s) under gate(s). Different possible implementations of hv gates dedicated to impact ionization require specific multiplication patterns and therefore new excess noise formulation. This paper presents a rigorous mathematical approach to the calculation of the excess noise factor for all electron multiplying CMOS pixel structures in the framework of the branching processes a… Show more

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Cited by 4 publications
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