2012
DOI: 10.15407/spqeo15.04.365
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A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots

Abstract: Using the variational method in real space and the effective-mass theory, we present quite an advanced semi-analytic approach susceptible for calculating the binding energy E B of Wannier excitons in semiconductor quantum dot structures with rectangular and parabolic shapes of the confining potential in the so-called strong-confinement regime. Illustration is given for CdS, ZnSe, CdSe, GaAs structures of crystallites for both rectangular and parabolic quantum dots, and it displays a very good agreement between… Show more

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Cited by 5 publications
(2 citation statements)
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“…QDs can be made into different forms such as cubic, spherical or cylindrical. On the base of these applications is the large dependence of exciton binding energy on different and adjustable parameters: the radius of the dot, the effective masses ratio of the carriers, the height and the shape of the confining potential caused by the matrix material in which the exciton is embedded [1][2][3][4][5]. Various external actions such as magnetic field [6], electric field [7,8] and hydrostatic pressure [9] were also considered and provide interesting properties.…”
Section: Introductionmentioning
confidence: 99%
“…QDs can be made into different forms such as cubic, spherical or cylindrical. On the base of these applications is the large dependence of exciton binding energy on different and adjustable parameters: the radius of the dot, the effective masses ratio of the carriers, the height and the shape of the confining potential caused by the matrix material in which the exciton is embedded [1][2][3][4][5]. Various external actions such as magnetic field [6], electric field [7,8] and hydrostatic pressure [9] were also considered and provide interesting properties.…”
Section: Introductionmentioning
confidence: 99%
“…C. A. Duque et al [3] were studied the combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells and found that the exciton binding energy is a decreasing function of the intense laser field parameter and of the electric field. On the base of these applications is the large dependence of exciton binding energy on different and adjustable parameters: the radius of the dot, the effective masses ratio of the carriers, the height and the shape of the confining potential caused by the matrix material in which the exciton is embedded [4][5]. Various external actions such as magnetic field [6], electric field [7][8] and hydrostatic pressure [9] were also considered and provide interesting properties.…”
Section: Introductionmentioning
confidence: 99%