A theoretical and experimental investigation on millimeter‐wave quantum well oscillators

Rydberg, Anders; Grönqvist, Hans; Kollberg, E.

doi:10.1002/mop.4650010907

Cited by 17 publications

(2 citation statements)

References 7 publications

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“…The first experiments with Quantum Well (QW) diode oscillators were made by Sollner 1983 at microwave fiequencies. Recent results are encouraging (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21). The QW-diode can also be used in multipliers (52,53), and should have a possible application in negative resistance mixers with a potential of having conversion gain.…”

Section: Quantum Well Oscillatorsmentioning

confidence: 97%

New Solid State Devices and Circuits for Millimeter Wave Applications

Kollberg

1991

21st European Microwave Conference, 1991

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In this paper we will address some new devices and circuits conceptually different to well known microwave devices and circuits. Hence we will briefly discuss devices such as the quantum well diode for oscillators, multipliers and mixers, the back to back Banier xi-n+ (bbBNN) varactor diode for multipliers, the single barier varactor (SBV) diode for multipliers, and new achievements conceming the design and fabrication of Schottky diodes.Concerning circuits, we focus on new approaches for the basic problem of handling large powers at millimeter waves (and microwaves) using solid state devices. A quasioptical design approach with many devices distributed over a surface several wavelengths in dimensions can be used to distibute large power to hundreds of low power devices. This technique is referred to as quasioptical array or grid technique. A few selected recent achievements are presented, demonstrating principles concerning arrays for oscillators, amplifiers, multipliers, phase shifters and mixers. MIRQQ.UCTIQMillimeter wave techniques is becoming more important as new millimeter wave technology emerge and stimulate development of new systems for new applications. In this paper we will briefly discus some "old" devices, but essentially focus on new devices and circuits conceptually different to well known microwave devices and circuits. Hence we will briefly discuss devices such as the quantum well diode for oscillators, multipliers and mixers, the bbBNN varactor diode for multipliers, the single barrier varctor (SBV) diode for multipliers, and new achievements concerning the design and fabrication of Schottky diodes.Concerning circuits, we focus on new approaches for the basic problem of handling large powers at millimeter waves (and microwaves) using solid state devices. High power handling for a single device means that it has to take high voltages and currents leading to break down phenomena and excess heating. Both problems worsen at higher frequencies since the dimensions of essentially any device have to shrink with increasing frequency in order to keep the impedance reasonable and the parasitics of the device low (2,24).An elegant way to improve the power handling is to let many devices be distributed over a surface several wavelengths in dimensions such that quasi-optical techniques can be used to couple the power to the devices (28,35). This technique is referred to as quasioptical array or grid technique. In fact almost any solid state device can be integrated in an array and thereby improve the power handling capacity. Below a few selected recent achievements are presented, demonstrating principles conceming arrays for oscillators, multipliers, phase shifters and mixers. OSCILAIQORaFor applications using millimeter and submillimeter waves, there is a strong demand for solid state high efficiency sources with low and medium output power. It is to day possible to

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Section: Quantum Well Oscillatorsmentioning

confidence: 97%

New Solid State Devices and Circuits for Millimeter Wave Applications

Kollberg

1991

21st European Microwave Conference, 1991

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“…The high current density extended the maximum oscillation frequency from 100 GHz to 712 GHz [18]. Oscillations in the range 20-100 GHz were obtained with strained InGaAs/AlAs layers [19] and from 10 to 400 GHz for AlAs/GaAs heterostructures [ 20] [ 21] [ 22 ]. Concerning the output power delivered by the devices, practically all the devices tested have very small area to obtain dc stability.…”

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confidence: 99%

Quantum well devices for millimetre wave applications

Lippens

1993

23rd European Microwave Conference, 1993

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Quantum well devices exhibit strong non-linearity with very short time responses which make them attractive for non-linear applications at very high frequencies. In this paper, we review several topics concerning the design, the fabrication and the frequency evaluation of these devices. We discuss notably new proposals in order to improve their frequency and power capabilities in the context of recent progress in strained layer epitaxy and finite superlattices. Concerning fabrication, the more recent developments for integrating the device in a whisker-less technology are reported. On this basis a few selected recent achievements for demonstrating the ability of these devices to operate at very high frequency are considered. Lastly, we focus on recent advances related to the applications for the devices used as oscillators, harmonic multipliers, detectors and mixers. IntroductionThe remarkable advancement of the last decade in the techniques of crystal growth has stimulated active research in many laboratories on heterostructure devices where electronic transport is perpendicular to heterolayers. In particular, a variety of experiments have been conducted with heterostructures which consist of two barriers in series separated by a potential well. When the thickness of the layers of this double barrier heterostructure (DBH) are typically smaller than 5 nm, significant quantum effects, such as size-quantization and tunnelling can be expected giving rise to the so-called resonant tunnelling effect [1].Basically, these quantum well devices are useful for very high frequency applications at millimetre and submillimetre wave lengths because they are able to respond very quickly and sensitively to a voltage control. In addition, they have potential advantages such as stronger non-linearity and/or special symmetry, with respect to conventional devices, which make them attractive for non-linear functions. Lastly, one can expect a reduction of noise term which should be benefit for applications. In this context, quantum well devices have received a widespread interest aimed at establishing a better understanding of their electrical properties and hence to use them in practical applications.In this paper, we review various aspects concerning the modelling, the fabrication and the frequency evaluation of these new devices. We will see that a DBH acts as an energy filter which exhibits peaks in electron transmission and consequently in current-voltage characteristics at certain values of voltage. Therefore, the devices exhibit negative differential resistance effect so that they can be used as oscillators especially. Generally speaking, the important figures of merit for quantum well devices are the peak current density (Jp) and the peak to valley current ratio (PVCR). In a first section we will see how these parameters can be optimized by a proper choice of structural parameters and material systems. Another challenging topic concerns the processing techniques for the fabrication of very small area devices reported in sectio...

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Quantum‐well and quantum‐barrier diodes for generating submillimeter wave power

Grönqvist

Kollberg

Rydberg

1991

Micro & Optical Tech Letters

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Quantum‐well diodes have been used for generating power at millimeter and submillimeter waves, both in negative resistance oscillators and in multipliers. In this article, we will first discuss the power versus frequency and the maximum frequency of oscillation of “ordinary” quantum‐well oscillators. Possible methods of improving the power output and the maximum frequency of oscillation will be suggested. Quantum‐well diode multipliers will also be discussed. Realizing the importance of the nonlinear capacitance for the quantumwell diode multiplier efficiency, we have investigated a quantum‐barrier diode in multiplier applications.

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A theoretical and experimental investigation on millimeter‐wave quantum well oscillators

Cited by 17 publications

References 7 publications

New Solid State Devices and Circuits for Millimeter Wave Applications

New Solid State Devices and Circuits for Millimeter Wave Applications

Quantum well devices for millimetre wave applications

Quantum‐well and quantum‐barrier diodes for generating submillimeter wave power

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