Quantum‐well and quantum‐barrier diodes for generating submillimeter wave power

Grönqvist, Hans; Kollberg, E.; Rydberg, Anders

doi:10.1002/mop.4650040111

Cited by 24 publications

(8 citation statements)

References 15 publications

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“…Notice also that often incorrectly fo= =l/4lCoRs=(W+lqw)/4xAeRs has been referred to as equal to fmax. The reason for this erroneous conclusion is that in detennining the device capacitance (C=dQ/dV) one must also include the contribution from the space charge in the depleted region related to the conduction current (21). This statement is confirmed by recent capacitance measurements (see Fig.…”

Section: Quantum Well Oscillatorsmentioning

confidence: 55%

“…(2) compared with the experimental results for fundamental oscillations reported in Ref. (21). The diode epitaxial mateial had a 45 A GaAs well suirounded by 20 A AlAs barriers and a 50 A spacer layer of GaAs outside each bafrier.…”

Section: Quantum Well Oscillatorsmentioning

confidence: 84%

“…The first experiments with Quantum Well (QW) diode oscillators were made by Sollner 1983 at microwave fiequencies. Recent results are encouraging (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21). The QW-diode can also be used in multipliers (52,53), and should have a possible application in negative resistance mixers with a potential of having conversion gain.…”

Section: Quantum Well Oscillatorsmentioning

confidence: 97%

“…Since the bias voltage is typically of the order I Volt, the mean electrn velocity will become quite low. Modifications of the GaAs epitaxial layer have been suggested, that should mprove the effilciency and increase fmax (21). However, new materials combinations such as InGaAslAlAs and InAs/AlSb (20) are expected to offer even higher fmax and efficiency.…”

Section: Quantum Well Oscillatorsmentioning

confidence: 99%

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New Solid State Devices and Circuits for Millimeter Wave Applications

Kollberg

1991

21st European Microwave Conference, 1991

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In this paper we will address some new devices and circuits conceptually different to well known microwave devices and circuits. Hence we will briefly discuss devices such as the quantum well diode for oscillators, multipliers and mixers, the back to back Banier xi-n+ (bbBNN) varactor diode for multipliers, the single barier varactor (SBV) diode for multipliers, and new achievements conceming the design and fabrication of Schottky diodes.Concerning circuits, we focus on new approaches for the basic problem of handling large powers at millimeter waves (and microwaves) using solid state devices. A quasioptical design approach with many devices distributed over a surface several wavelengths in dimensions can be used to distibute large power to hundreds of low power devices. This technique is referred to as quasioptical array or grid technique. A few selected recent achievements are presented, demonstrating principles concerning arrays for oscillators, amplifiers, multipliers, phase shifters and mixers. MIRQQ.UCTIQMillimeter wave techniques is becoming more important as new millimeter wave technology emerge and stimulate development of new systems for new applications. In this paper we will briefly discus some "old" devices, but essentially focus on new devices and circuits conceptually different to well known microwave devices and circuits. Hence we will briefly discuss devices such as the quantum well diode for oscillators, multipliers and mixers, the bbBNN varactor diode for multipliers, the single barrier varctor (SBV) diode for multipliers, and new achievements concerning the design and fabrication of Schottky diodes.Concerning circuits, we focus on new approaches for the basic problem of handling large powers at millimeter waves (and microwaves) using solid state devices. High power handling for a single device means that it has to take high voltages and currents leading to break down phenomena and excess heating. Both problems worsen at higher frequencies since the dimensions of essentially any device have to shrink with increasing frequency in order to keep the impedance reasonable and the parasitics of the device low (2,24).An elegant way to improve the power handling is to let many devices be distributed over a surface several wavelengths in dimensions such that quasi-optical techniques can be used to couple the power to the devices (28,35). This technique is referred to as quasioptical array or grid technique. In fact almost any solid state device can be integrated in an array and thereby improve the power handling capacity. Below a few selected recent achievements are presented, demonstrating principles conceming arrays for oscillators, multipliers, phase shifters and mixers. OSCILAIQORaFor applications using millimeter and submillimeter waves, there is a strong demand for solid state high efficiency sources with low and medium output power. It is to day possible to

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Section: Quantum Well Oscillatorsmentioning

confidence: 55%

Section: Quantum Well Oscillatorsmentioning

confidence: 84%

Section: Quantum Well Oscillatorsmentioning

confidence: 97%

Section: Quantum Well Oscillatorsmentioning

confidence: 99%

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New Solid State Devices and Circuits for Millimeter Wave Applications

Kollberg

1991

21st European Microwave Conference, 1991

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“…Kollberg, students and colleagues at Chalmers, especially Jan Stake, and others in the millimeter-wave community have continued to develop and improve the HBV device to this day [63]- [67]. Although they have so far proven to be most useful in the millimeter-wave bands, an upcoming paper planned for this journal has record HBV quintupler ( 5) results close to 500 GHz [68].…”

Section: "Instrument Maker To the Stars"mentioning

confidence: 97%