A Terahertz Detector Array in a SiGe HBT Technology

Hadi, Richard Al; Grzyb, Janusz; Heinemann, B.; Pfeiffer, Ullrich R.

doi:10.1109/jssc.2013.2265493

Cited by 65 publications

(36 citation statements)

References 27 publications

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“…, observed also at 330 GHz. This value is favorably compared with other results reported [6]. The measured large bandwidth of the detector can be attributed to the short microstrip lines employed in this work, which lead to a decreased Q-factor of the matching network.…”

Section: Measurement Resultssupporting

confidence: 72%

“…The measured large bandwidth of the detector can be attributed to the short microstrip lines employed in this work, which lead to a decreased Q-factor of the matching network. In addition, the large bandwidth of the employed CB configuration for the detector helped [6]. The measurement was made with a bias condition of V bb = 0.7 V and V cc = 2 V, leading to a DC power dissipation of 9.1 W.…”

Section: Measurement Resultsmentioning

confidence: 99%

“…1 shows the schematic of the detector, which is composed of a detector core and an on-chip integrated antenna. The detector core consists of a common-base (CB) differential pair (Q 1 and Q 2 ) [6] and an impedance matching network (T 1 -T 4 ). Due to the nonlinearity of the transistors, the collector current of each transistor bears a square term of the input signal.…”

Section: Circuit Designmentioning

confidence: 99%

See 2 more Smart Citations

A Wideband H-Band Image Detector Based on SiGe HBT Technology

Yoon¹,

Kaynak²,

Tillack³

et al. 2015

Journal of electromagnetic engineering and science

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A wideband H-band detector operating near 300 GHz has been developed based on SiGe HBT technology. The detector consists of an on-chip antenna and a HBT differential pair for square-law detection. It showed responsivity of more than 1,700 V/W and noise equivalent power (NEP) smaller than 180 pW/Hz 0.5 for the measured frequency range of 250-350 GHz. The maximum responsivity and the minimum NEP were 5,155 V/W and 57 pW/Hz 0.5 , respectively; both were obtained at 330 GHz with DC power dissipation at 9.1 W.Key Words: Detector, Imaging, SiGe HBT, Terahertz, Wideband. This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/ by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. ⓒ

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Section: Measurement Resultssupporting

confidence: 72%

Section: Measurement Resultsmentioning

confidence: 99%

Section: Circuit Designmentioning

confidence: 99%

See 1 more Smart Citation

A Wideband H-Band Image Detector Based on SiGe HBT Technology

Yoon¹,

Kaynak²,

Tillack³

et al. 2015

Journal of electromagnetic engineering and science

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“…The literature on the operation of HBT devices as THz detectors beyond their cut-off frequencies is very scarce. The authors reported the only available today small arrays of broadband HBT THz detectors [52,79,80] with an NEP of around 47 pW/ √ H z at 700 GHz (see Section 4.2).…”

Section: Arrays Of Thz Direct Detector In Silicon Technologiesmentioning

confidence: 99%

“…Therefore, a regular diode-connected high-speed HBT device may also be applied for this purpose. It can be, however, proven that this configuration is far from optimum in terms of the achievable performance and shows multiple drawbacks [79,80]. In order to better understand the performance degradation for this topology, a simplified cross-sectional view of the THz detector applied in this work consisting of two HBT devices in the so-called differential The array was assembled with a 3-mm-diameter hyper-hemispherical silicon lens without matching cap [59].…”

Section: Hbt Detector Arraysmentioning

confidence: 99%

THz Direct Detector and Heterodyne Receiver Arrays in Silicon Nanoscale Technologies

Grzyb¹,

Pfeiffer²

2015

J Infrared Milli Terahz Waves

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The main scope of this paper is to address various implementation aspects of THz detector arrays in the nanoscale silicon technologies operating at room temperatures. This includes the operation of single detectors, detectors operated in parallel (arrays), and arrays of detectors operated in a video-camera mode with an internal reset to support continuous-wave illumination without the need to synchronize the source with the camera (no lock-in receiver required). A systematic overview of the main advantages and limitations in using silicon technologies for THz applications is given. The on-chip antenna design challenges and co-design aspects with the active circuitry are thoroughly analyzed for broadband detector/receiver operation. A summary of the state-of-the-art arrays of broadband THz direct detectors based on two different operation principles is presented. The first is based on the non-quasistatic resistive mixing process in a MOSFET channel, whereas the other relies on the THz signal rectification by nonlinearity of the base-emitter junction in a high-speed SiGe heterojunction bipolar transistor (HBT) . For the MOSFET detector arrays implemented in a 65 nm bulk CMOS technology, a state-of-the-art optical noise equivalent power (NEP) of 14 pW/ √ H z at 720 GHz was measured, whereas for the HBT detector arrays in a 0.25 μm SiGe process technology, an optical NEP of 47 pW/ √ H z at 700 GHz was found. Based on the implemented 1k-pixel CMOS camera with an average power consumption of 2.5μW/pixel, various design aspects specific to video-mode operation are outlined and co-integration issues with the readout circuitry are analyzed. Furthermore, a single-chip 2 × 2 array of heterodyne receivers for multi-color active imaging in a 160-1000 GHz band is presented with a Janusz Grzyb J Infrared Milli Terahz Waves well-balanced NEP across the operation bandwidth ranging from 0.1 to 0.24 fW/Hz (44.1-47.8 dB single-sideband NF) and an instantaneous IF bandwidth of 10 GHz. In its present implementation, the receiver RF bandwidth is not continuously covered but divided into six bands centered around 165, 330, 495, 660, 820, and 990 GHz.

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Principles of THz Direct Detection

Brown

Segovia-Vargas

2015

Semiconductor Terahertz Technology

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A Terahertz Detector Array in a SiGe HBT Technology

Cited by 65 publications

References 27 publications

A Wideband H-Band Image Detector Based on SiGe HBT Technology

A Wideband H-Band Image Detector Based on SiGe HBT Technology

THz Direct Detector and Heterodyne Receiver Arrays in Silicon Nanoscale Technologies

Principles of THz Direct Detection

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