A temperature noise model for extrinsic FETs

Hughes, B.

doi:10.1109/22.156610

Cited by 43 publications

(17 citation statements)

References 73 publications

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“…Experimental results agree well with the expressions, and the model together with its implications have later been studied in many papers by other authors, e.g. Tasker et al (2) and Hughes (3). A disadvantage is that the relatively simple expressions for the model can be obtained only by omitting some significant components from the equivalent circuit.…”

Section: Introductioqsupporting

confidence: 55%

HEMT Noise Parameter Formulation by Using Intrinsic Noise Sources One by One

Mallat

1994

24th European Microwave Conference, 1994

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A new approach to noise paraneter formulation is presented and applied to a HEMT equivalent circuit. The approach focuses in representing the noise parameters of the device as a combined result of considering intrinsic noise sources one by one. This provides insight into the contribution of each intrinsic floise source and expressions for relating their effect to the dominating components of the equivalent circuit. The approach suits best for use with the resistor temperaiture noise model. The effect of the main parasitic components as well as the need to differenatiate between the sources in the modelling of an0y experimenial HEMT device can bevaluated.- INTRODUCTIOQ

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Section: Introductioqsupporting

confidence: 55%

HEMT Noise Parameter Formulation by Using Intrinsic Noise Sources One by One

Mallat

1994

24th European Microwave Conference, 1994

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“…Since the axes are orthogonal, and can be extracted independently. According to (1), this selection corresponds to one source admittance satisfying (9) and the other satisfying (10) However, (3) and (4) give (11) The elements of the nodal impedance matrix are given by the cofactor method and (5) as (12) where is the submatrix formed by deleting the th row and th column of .…”

Section: B Balanced Selections Of Source Admittancesmentioning

confidence: 99%

A new extraction method for the two-parameter FET temperature noise model

Garcı́a

Stenarson

Yhland

et al. 1998

IEEE Trans. Microwave Theory Techn.

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This paper presents a direct extraction method for the associated noise temperatures T d and Tg in the field-effect transistor (FET) temperature noise model. The method is related to nodal analysis of circuits. T d and Tg are extracted from the small-signal model parameters and the noise parameters of the device. It is also theoretically shown that there exist source admittances that cancel the thermal noise contribution at the output from either T d or Tg in the model. Finally, a commercially available GaAs pseudomorphic high electron-mobility transistor (pHEMT) is measured and modeled for a wide range of bias points. Comparisons between measured and modeled noise parameters are presented in the 2-26-GHz frequency range. Index Terms-FET noise model, nodal analysis, noise-model extraction, source balance admittance.

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“…Despite their roughly comparable production 's, GaAs (or InP)-based technologies will continue to maintain a small but significant absolute performance advantage due to the higher low-field mobility, which has a major impact on device noise figure [11]. The ohmic resistances leading to the device, which play a major part in determining noise-figure, are dominated by low-field electron mobility, and the metal-gate structure of a typical GaAs MESFET or PHEMT reduces the series gate resistance compared to that of a silicided MOSFET gate.…”

Section: Technology Considerationsmentioning

confidence: 99%

Integrated circuit technology options for RFICs-present status and future directions

Larson

1998

IEEE J. Solid-State Circuits

205

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Abstract-This paper will summarize the technology tradeoffs that are involved in the implementation of radio frequency integrated circuits for wireless communications. Radio transceiver circuits have a very broad range of requirements-including noise figure, linearity, gain, phase noise, and power dissipation. The advantages and disadvantages of each of the competing technologies-Si CMOS and bipolar junction transistors (BJT's), Si/SiGe HBT's and GaAs MESFET's, PHEMTS and HBT's will be examined in light of these requirements.

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A temperature noise model for extrinsic FETs

Cited by 43 publications

References 73 publications

HEMT Noise Parameter Formulation by Using Intrinsic Noise Sources One by One

HEMT Noise Parameter Formulation by Using Intrinsic Noise Sources One by One

A new extraction method for the two-parameter FET temperature noise model

Integrated circuit technology options for RFICs-present status and future directions

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