HEMT Noise Parameter Formulation by Using Intrinsic Noise Sources One by One

Abstract

A new approach to noise paraneter formulation is presented and applied to a HEMT equivalent circuit. The approach focuses in representing the noise parameters of the device as a combined result of considering intrinsic noise sources one by one. This provides insight into the contribution of each intrinsic floise source and expressions for relating their effect to the dominating components of the equivalent circuit. The approach suits best for use with the resistor temperaiture noise model. The effect of the main parasitic components as well as the need to differenatiate between the sources in the modelling of an0y experimenial HEMT device can bevaluated.- INTRODUCTIOQ