“…An in-depth characterization of local strain distribution in RUNTs is required to understand the growth process and to optimize the resulting mechanical and electronic properties toward technological applications such as band-gap engineering for optoelectronic devices (Lamberti, 1996a(Lamberti, , 1996b. It was demonstrated, combining micro-Raman Songmuang et al, 2006) and TEM (Prinz et al, 2002;Songmuang et al, 2006), that RUNTs are formed by an alternation of crystalline and noncrystalline layers representing a radial superlattice . Nevertheless, a nondestructive structural characterization of superlattice interfaces, without removal of the RUNTs from the substrate, required the use of XRD (Pietsch, Holý, and Baumbach, 2004).…”