Strain induced semiconductor nanotubes: from formation process to device applications

Li, Xiuling

doi:10.1088/0022-3727/41/19/193001

Cited by 135 publications

(122 citation statements)

References 82 publications

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“…S-RuMs are optically transparent under most conventional microscopy techniques, including phase-contrast and fluorescence imaging, which makes them ideal for use with cultured cells. Since they are manufactured using a scalable semiconductor process (Li, 2008;Huang et al, 2012), they are highly customizable and versatile, which facilitates many different designs (Froeter et al, 2013). They also are biocompatible, an essential characteristic for cell and tissue interfaces (Froeter et al, 2014).…”

Section: Topographical Cues Drive Alignment and Directionalitymentioning

confidence: 99%

Biomaterials for Enhancing Neuronal Repair

Cangellaris

Gillette

2018

Front. Mater.

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As they differentiate from neuroblasts, nascent neurons become highly polarized and elongate. Neurons extend and elaborate fine and fragile cellular extensions that form circuits enabling long-distance communication and signal integration within the body. While other organ systems are developing, projections of differentiating neurons find paths to distant targets. Subsequent post-developmental neuronal damage is catastrophic because the cues for reinnervation are no longer active. Advances in biomaterials are enabling fabrication of micro-environments that encourage neuronal regrowth and restoration of function by recreating these developmental cues. This mini-review considers new materials that employ topographical, chemical, electrical, and/or mechanical cues for use in neuronal repair. Manipulating and integrating these elements in different combinations will generate new technologies to enhance neural repair.

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Section: Topographical Cues Drive Alignment and Directionalitymentioning

confidence: 99%

Biomaterials for Enhancing Neuronal Repair

Cangellaris

Gillette

2018

Front. Mater.

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“…These results can provide an access to design a curvature-tunable filter. With the advent and development of nanostructure technology, a variety of nanostructures with complex geometries were successfully fabricated, such as corrugated semiconductor films [1][2][3][4][5][6] , rolled-up nanotubes [7][8][9][10][11][12] , Möbius stripes [13][14][15] , peanut-shaped C 60 polymers [16][17][18][19][20] . These successes in experiment found the basis of the emerging nanoelectronics.…”

mentioning

confidence: 99%

Transmission gaps from corrugations

Wang

Liang

Jiang

et al. 2016

J. Phys. D: Appl. Phys.

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A model including a periodically corrugated thin layer with GaAs substrate is employed to investigate the effects of the corrugations on the transmission probability of the nanostructure. We find that transmission gaps and resonant tunneling domains emerge from the corrugations, in the tunneling domains the tunneling peaks and valleys result from the boundaries between adjacent regions in which electron has different effective masses, and can be slightly modified by the layer thickness. These results can provide an access to design a curvature-tunable filter.

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“…Almost two decades ago, Prinz and coworkers [1] proposed a method to define micro/nanoarchitectures through the controlled release of strained membranes [2]. Since then, several authors studied and implemented this technique, highlighting the possibility of obtaining miniaturized devices without the need of complex procedures [3][4][5]. This technique combines bottomup and top-down methodologies.…”

Section: Introductionmentioning

confidence: 99%

Deviation from Regular Shape in the Early Stages of Formation of Strain-Driven 3D InGaAs/GaAs Micro/Nanotubes

Frigeri¹,

Seravalli²,

Calicchio³

et al. 2017

Journal of Nanomaterials

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Single-crystalline InGaAs/GaAs semiconductor micro/nanotubes have been obtained by the strain-driven self-rolling mechanism. This approach combines the advantages of bottom-up (epitaxial growth) and top-down (postgrowth processing) techniques, offering an exceptional opportunity to realize complex three-dimensional nanoarchitectures by using conventional photolithography and wet-etching processes. The method employed to obtain micro/nanotubes with selected orientation and length is described in detail. By means of high-resolution scanning electron microscopy characterization, we show a clear shape difference between single-wall and multiwalls tubes and we discuss it on the basis of strain release, taking into account also possible shape deformations induced during micro/nanotubes drying. We analyse the In-segregation profile in the nominal In 0.20 Ga 0.80 As/GaAs bilayer and we show its effect on the actual diameter of the tubes, concluding that a more accurate description of the structure should consider an In 0.20 Ga 0.80 As/In 0.10 Ga 0.90 As/GaAs trilayer. This work will be useful to set up reliable methodologies for the realization of straindriven micro/nanotubes with controlled properties, necessary for their implementation in a large number of application fields.

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Strain induced semiconductor nanotubes: from formation process to device applications

Cited by 135 publications

References 82 publications

Biomaterials for Enhancing Neuronal Repair

Biomaterials for Enhancing Neuronal Repair

Transmission gaps from corrugations

Deviation from Regular Shape in the Early Stages of Formation of Strain-Driven 3D InGaAs/GaAs Micro/Nanotubes

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