A systematic study of DRIE process for high aspect ratio microstructuring

Hooda, Manish; Wadhwa, Manoj; Verma, Sanjay Kumar; Nayak, M. M.; George, P.J.; Paul, A.K.

doi:10.1016/j.vacuum.2010.01.052

Cited by 27 publications

(9 citation statements)

References 8 publications

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“…In the approaches using SOI wafers, a backside micromachining of the wafer is required to remove the bottom Si (thickness of few μm) until the sacrificial layer. However, due to the large aspect ratio of the intended cavities, the DRIE on SOI wafers leads to silicon grass formation [ 77 ] and consequently changes the MEMS physical properties (e.g., heavier resonator with different f 0 ). To overcome this problem, a wafer backside grinding can be performed reducing the cavities aspect ratio.…”

Section: Towards Picotesla Field Detectionmentioning

confidence: 99%

Hybrid Integration of Magnetoresistive Sensors with MEMS as a Strategy to Detect Ultra-Low Magnetic Fields

et al. 2016

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In this paper, we describe how magnetoresistive sensors can be integrated with microelectromechanical systems (MEMS) devices enabling the mechanical modulation of DC or low frequency external magnetic fields to high frequencies using MEMS structures incorporating magnetic flux guides. In such a hybrid architecture, lower detectivities are expected when compared with those obtained for individual sensors. This particularity results from the change of sensor’s operating point to frequencies above the 1/f noise knee.

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Section: Towards Picotesla Field Detectionmentioning

confidence: 99%

Hybrid Integration of Magnetoresistive Sensors with MEMS as a Strategy to Detect Ultra-Low Magnetic Fields

et al. 2016

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“…Deep reactive ion etching (DRIE) is also an option for the fabrication of nano scale uniform trenches, however, comprehensive process optimization which includes gas composition and controlled gas flow rate for etching and passivation cycles need to be carried out to achieve this desired small size. This is because the DRIE method caused scallop effect triggered by alternating phase of the passivation gas and etching gas on trench wall that affect trench structure and its surface quality (Hooda et al 2010;Miller et al 2013;Parasuraman et al 2014).…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Micromachined Uniform Microtrench Arrays for Silicon based Filtration Membrane

Mustafa

Majlis

Yunas

et al. 2019

JSM

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In this paper, we report a uniform microtrench array fabricated on silicon substrate. The proposed system is aimed for the biological molecules separation process via filtration in artificial kidney. The system consists of silicon based membrane having arrays of trench with the dimension of approximately 1 µm. The fabrication of the trenches is following standard silicon MEMS process with additional surface modification of the fabricated trench by using thermal oxidation process. The result shows that trench patterns having size of 1~2 µm have been produced. The thermal oxidation process shows that the trench size could be reduced up to 50%. The study will be beneficial for the development of silicon membrane with uniform microtrench arrays for application in filtration of blood cell from other solutes based on molecule size. When the microtrench is etched through the silicon membrane, a filtration membrane is then formed. The separation of solutes will be better due to the uniform size of microtrench.

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“…Sidewall damage occurs during etching and is different from the scallop that inevitably results from the Bosch method. In previous studies [3], experiments were conducted with small sample-type parts.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Etching Profile in Deep-Reactive-Ion Etching for MEMS Processes of Sensors

Yang¹,

Kim²,

Park³

2015

Journal of Sensor Science and Technology

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This paper reports the results of a study on the optimization of the etching profile, which is an important factor in deep-reactive-ion etching (DRIE), i.e., dry etching. Dry etching is the key processing step necessary for the development of the Internet of Things (IoT) and various microelectromechanical sensors (MEMS). Large-area etching (open area > 20%) under a high-frequency (HF) condition with nonoptimized processing parameters results in damage to the etched sidewall. Therefore, in this study, optimization was performed under a low-frequency (LF) condition. The HF method, which is typically used for through-silicon via (TSV) technology, applies a high etch rate and cannot be easily adapted to processes sensitive to sidewall damage. The optimal etching profile was determined by controlling various parameters for the DRIE of a large Si wafer area (open area > 20%). The optimal processing condition was derived after establishing the correlations of etch rate, uniformity, and sidewall damage on a 6-in Si wafer to the parameters of coil power, run pressure, platen power for passivation etching, and SF 6 gas flow rate. The processing-parameter-dependent results of the experiments performed for optimization of the etching profile in terms of etch rate, uniformity, and sidewall damage in the case of large Si area etching can be summarized as follows. When LF is applied, the platen power, coil power, and SF 6 should be low, whereas the run pressure has little effect on the etching performance. Under the optimal LF condition of 380 Hz, the platen power, coil power, and SF 6 were set at 115 W, 3500 W, and 700 sccm, respectively. In addition, the aforementioned standard recipe was applied as follows: run pressure of 4 Pa, C 4 F 8 content of 400 sccm, and a gas exchange interval of SF 6 /C 4 F 8 = 2 s/3 s.

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A systematic study of DRIE process for high aspect ratio microstructuring

Cited by 27 publications

References 8 publications

Hybrid Integration of Magnetoresistive Sensors with MEMS as a Strategy to Detect Ultra-Low Magnetic Fields

Hybrid Integration of Magnetoresistive Sensors with MEMS as a Strategy to Detect Ultra-Low Magnetic Fields

Fabrication of Micromachined Uniform Microtrench Arrays for Silicon based Filtration Membrane

Optimization of Etching Profile in Deep-Reactive-Ion Etching for MEMS Processes of Sensors

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