A surface plasmon study of the optical dielectric function of indium

Sambles, J. R.; Hibbins, Alastair P.; Jory, M. J.; Azizbekyan, H.

doi:10.1080/09500340008232169

Cited by 8 publications

(3 citation statements)

References 15 publications

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“…17 We used the Drude model for the dielectric function of metallic indium, which according to Sambles et al fits experimental data reasonably well. 25 The dielectric functions used in the following are shown in Fig. 6.…”

Section: Discussionmentioning

confidence: 99%

Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering—A case study on indium oxide

Albrecht

Schewski

Irmscher

et al. 2014

Journal of Applied Physics

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In this paper, we show by optical and electron microscopy based investigations that vacancies in oxides may cluster and form metallic nanoparticles that induce coloration by extinction of visible light. Optical extinction in this case is caused by generation of localized surface plasmon resonances at metallic particles embedded in the dielectric matrix. Based on Mie's approach, we are able to fit the absorption due to indium nanoparticles in In2O3 to our absorption measurements. The experimentally found particle distribution is in excellent agreement with the one obtained from fitting by Mie theory. Indium particles are formed by precipitation of oxygen vacancies. From basic thermodynamic consideration and assuming theoretically calculated activation energies for vacancy formation and migration, we find that the majority of oxygen vacancies form just below the melting point. Since they are ionized at this temperature they are Coulomb repulsive. Upon cooling, a high supersaturation of oxygen vacancies forms in the crystal that precipitates once the Fermi level crosses the transition energy level from the charged to the neutral charge state. From our considerations we find that the ionization energy of the oxygen vacancy must be higher than 200 meV.

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Section: Discussionmentioning

confidence: 99%

Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering—A case study on indium oxide

Albrecht

Schewski

Irmscher

et al. 2014

Journal of Applied Physics

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“…Light absorption by evaporated indium films was considered from ellipsometric analysis showing an absorption peak at 867 nm attributed to electron transitions between parallel bands and noticeable mainly at low temperatures [6]. The excitation of surface plasmon-polaritons on indium-coated silica gratings, illuminated with visible polarized light, has been carried out [7]. Non-linear effects have also been considered [8].…”

Section: Introductionmentioning

confidence: 99%

Polycrystalline indium films in the percolation threshold regime: time correlation between electric conduction and optical properties with film morphology

Clark¹,

Vargas²,

Azofeifa³

et al. 2014

Mater. Res. Express

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“…To obtain a better fit, a higher absorption must be used, which supports the assumption of a Lorentzian oscillator in the UV. 11) The best result was with " ¼ À6:5 þ i6:3. Considering that the surface layer will incorporate also gallium and hence has a plasmonic resonance at longer wavelength, this value seems very reasonable.…”

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confidence: 99%

Surface Transitions During InGaN Growth on GaN(0001) in Metal–Organic Vapor Phase Epitaxy

Pristovsek

Kadir

Kneissl

2013

Jpn. J. Appl. Phys.

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Using in-situ ellipsometry measurements we observed three different surfaces during growth of InGaN(0001) in metal–organic vapor phase epitaxy, which is similar to reports for GaN(0001) or In on GaN in molecular beam epitaxy. Among these surfaces one is identical to the pre-growth GaN surface (for less than 10% In), the second contains about 1 monolayer (ML) of metal (for In between 10 and 35%), and finally a surface with ≤2 ML of metal (for 45% In). Exceeding an In/(Ga+In) input ratio of 80% in the gas phase leads to the formation of In droplets.

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A surface plasmon study of the optical dielectric function of indium

Cited by 8 publications

References 15 publications

Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering—A case study on indium oxide

Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering—A case study on indium oxide

Polycrystalline indium films in the percolation threshold regime: time correlation between electric conduction and optical properties with film morphology

Surface Transitions During InGaN Growth on GaN(0001) in Metal–Organic Vapor Phase Epitaxy

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