A submicron split-gate AlGaN/GaN heterostructure field-effect transistor for class-A common-source voltage amplifier applications

In this study, GaN-based side-gate heterostructure transistors (SGHTs) with two electrical operating modes were fabricated. In the first operating mode, the SGHT was utilized as a common-source voltage amplifier with low power consumption and a broad input signal range. Analysis of the main scattering mechanisms affecting the electrical transport of two-dimensional electron gas (2DEG) in the channel revealed that polar optical phonon scattering and polarization Coulomb field (PCF) scattering play dominant roles under different side-gate voltages. In addition, channel current modulation of 2DEG electron mobility is primarily attributed to PCF scattering. Due to PCF scattering, the channel width also modulates the threshold voltage in this mode of operation. Moreover, in the second operating mode, the SGHT functioned as a traditional GaN high electron mobility transistor, allowing for electrically modulated threshold voltage and transconductance.

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Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Liu,

Fu,

Jiang

et al. 2023

Journal of Applied Physics

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In this study, the ungated AlGaN/GaN devices with special mesa structures were designed. The hypothesis of effective width expansion was tested experimentally by using ungated samples with different sizes, and an empirical expression for calculating the conduction channel effective width was given according to the experimental results. Finally, split-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths were prepared, and the channel electron mobility of split-gate samples was calculated by using the empirical expression and polarization Coulomb field (PCF) scattering theoretical model. The results showed that, for split-gate AlGaN/GaN HFETs, with the increase in the gate length, the total amount of additional polarization charges underneath the gate increases, resulting in the enhancement of the PCF scattering intensity.

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A submicron split-gate AlGaN/GaN heterostructure field-effect transistor for class-A common-source voltage amplifier applications

Cited by 5 publications

References 21 publications

Structural, electrical, magnetic & optical properties of Nickel, cobalt doped and Co-doped wurtzite GaN: A first-principle investigation

Structural, electrical, magnetic & optical properties of Nickel, cobalt doped and Co-doped wurtzite GaN: A first-principle investigation

Study of electrical transport properties of GaN-based side-gate heterostructure transistors

Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

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