A Sub-µg Bias-Instability MEMS Oscillating Accelerometer With an Ultra-Low-Noise Read-Out Circuit in CMOS

Zhao, Yang; Zhao, Jian; Wang, Xi; Hu, Anqi; Qiu, Anping; Su, Yan; Xu, Yong

doi:10.1109/jssc.2015.2431076

Cited by 45 publications

(24 citation statements)

References 34 publications

(46 reference statements)

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Section: Allan Variancecontrasting

confidence: 74%

“…Compared with our previous work in [27], a considerable bias-instability (0.6 μg to 0.51 μg) is achieved. However, a R-C bias tree is employed in [27] to filter out the 1/f noise from TIA. After the preliminary verification of AC polarization idea in MEMS SOA, a CMOS chip-level readout circuit will be developed subsequently to further improve the sensor accuracy.…”

Section: Allan Variancecontrasting

confidence: 74%

“…The nominal frequency of each DEFT is 18 kHz, with an acceleration sensitivity of 70 Hz/g with the assistance of micro-leverage. The target full scale is ± 30 g. The sensing element die is fabricated in an 80-µm SOI (Silicon-On-Insulator) process with a high aspect ratio up to 1:30 [27]. The die is realized with three wafers: the substrate, the device layer and the cover.…”

Section: Mems Soa Overviewmentioning

confidence: 99%

“…The only way to reduce 1/f noise in V b is to increase the size of the input transistor, but it increases the gate capacitance as well. As explained in [27], the stability, gain-bandwidth product (GBP) and noise floor of TIA highly depend on its input loading capacitance, the 1/f noise of V b must be compromised and became the dominant contributor of bias-instability other than AGC. Figure 3b presents an alternative solution: a R-C passive filter is inserted between sense electrode and front-end TIA, which allows the motional current flow through C b and apply DC bias via R b [29,30].…”

Section: Why Ac Polarization?mentioning

confidence: 99%

See 3 more Smart Citations

Expanding Bias-instability of MEMS Silicon Oscillating Accelerometer Utilizing AC Polarization and Self-Compensation

Zhao

Shi

et al. 2020

Sensors

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This paper presents a MEMS (Micro-Electro-Mechanical System) Silicon Oscillating Accelerometer (SOA) with AC (alternating current) polarization to expand its bias-instability limited by the up-converted 1/f noise from front-end transimpedance amplifier (TIA). In contrast to the conventional DC (direct current) scheme, AC polarization breaks the trade-off between input transistor gate size and white noise floor of TIA, a relative low input loading capacitance can be implemented for low noise consideration. Besides, a self-compensation technique combining polarization source and reference in automatic-gain-control (AGC) is put forward. It cancels the 1/f noise and drift introduced by the polarization source itself, which applies to both DC and AC polarization cases. The experimental result indicates the proposed AC polarization and self-compensation strategy expand the bias-instability of studied SOA from 2.58 μg to 0.51 μg with a full scale of ± 30 g, a 155.6 dB dynamic range is realized in this work.

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Section: Allan Variancecontrasting

confidence: 74%

Section: Allan Variancecontrasting

confidence: 74%

Section: Mems Soa Overviewmentioning

confidence: 99%

Section: Why Ac Polarization?mentioning

confidence: 99%

See 2 more Smart Citations

Expanding Bias-instability of MEMS Silicon Oscillating Accelerometer Utilizing AC Polarization and Self-Compensation

Zhao

Shi

et al. 2020

Sensors

Self Cite

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“…a 20ḡ (gravity units) FSR acceleration on a typical MEMS accelerometer [10], [11]. It is also at least one order of magnitude lower than Coriolis forces on a MEMS gyroscope driven with a 5 µm amplitude around 20 kHz, for typical FSR angular rates of 2000 dps [12], [13].…”

Section: Introductionmentioning

confidence: 95%

A 3-D Micromechanical Multi-Loop Magnetometer Driven Off-Resonance by an On-Chip Resonator

Laghi

Marra

Minotti

et al. 2016

J. Microelectromech. Syst.

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Abstract-The work presents the principle and the complete characterization of a single-chip unit formed by MEMS magnetometers to sense the 3D magnetic field vector, and a Tang resonator. The three sensors, nominally with the same resonance frequency, are operated 200 Hz off-resonance through an AC current whose reference frequency is provided by the resonator, embedded in an oscillating circuit. The sensors gain is increased by adopting a current recirculation strategy using metal strips directly deposited on the structural polysilicon. At a driving value of 100 µArms flowing in series through the three devices, the magnetometers show a sub 185 nT/ √ Hz resolution with a selectable bandwidth up to 50 Hz. Over a ± 5 mT full-scale range, the sensitivity curves show linearity errors lower than 0.2%, with high cross-axis rejection and immunity to external accelerations. Under temperature changes, stability of the 200-Hz difference between the magnetometers and the resonator frequency is within 55 ppm/K. Offset is trimmed down to the µT range, with an overall measured Allan stability of about 100 nT at 20 s observation time.

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Parametrically Driven Inertial Sensing in Chip‐Scale Optomechanical Cavities at the Thermodynamical Limits with Extended Dynamic Range

Flores

Yerebakan

Wang

et al. 2023

Laser & Photonics Reviews

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Recent scientific and technological advances have enabled the detection of gravitational waves, autonomous driving, and the proposal of a communications network on the Moon (Lunar Internet or LunaNet). These efforts are based on the measurement of minute displacements and their corresponding force transduction, which enables acceleration, velocity, and position determination for navigation. State-of-the-art accelerometers use capacitive or piezoresistive techniques and micro-electromechanical systems (MEMS) via integrated circuit (IC) technologies to drive transducers and convert their output for electric readout. In recent years, laser optomechanical transduction and readout have enabled highly sensitive detection of motional displacement.Here the theoretical framework is further examined for the novel mechanical frequency readout technique of optomechanical transduction when the sensor is driven into oscillation mode. Theoretical and physical agreements are demonstrated, and the most relevant performance parameters are characterized by a device with a 1.5 mg Hz −1 acceleration sensitivity, a 2.5 fm Hz −1/2 displacement resolution corresponding to a 17.02 µg Hz −1/2 force-equivalent acceleration, and a 5.91 Hz nW −1 power sensitivity, at the thermodynamical limits. In addition, a novel technique is presented for dynamic range extension while maintaining the precision sensing sensitivity. This inertial accelerometer is integrated on-chip and enabled for packaging, with a laser-detuning-enabled approach.

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A Sub-µg Bias-Instability MEMS Oscillating Accelerometer With an Ultra-Low-Noise Read-Out Circuit in CMOS

Cited by 45 publications

References 34 publications

Expanding Bias-instability of MEMS Silicon Oscillating Accelerometer Utilizing AC Polarization and Self-Compensation

Expanding Bias-instability of MEMS Silicon Oscillating Accelerometer Utilizing AC Polarization and Self-Compensation

A 3-D Micromechanical Multi-Loop Magnetometer Driven Off-Resonance by an On-Chip Resonator

Parametrically Driven Inertial Sensing in Chip‐Scale Optomechanical Cavities at the Thermodynamical Limits with Extended Dynamic Range

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