A Sub-mW Fully Integrated Wide-Band Receiver for Wireless Sensor Network

“…The resulting scheme after simplification is presented in Figure 3. With this result, the number of BJTs is reduced as much as possible, yielding a higher cut-off frequency and a better noise performance [22]. The required values of the bias current I 01 obtained in simulation to achieve a 50 Ω input impedance are plotted in Figure 4 for various transistor areas from the 0.35 µm SiGe design kit used.…”

Section: Rf-vga Based On the Current Conveyormentioning

confidence: 99%

A Compact Size Wideband RF-VGA Based on Second Generation Controlled Current Conveyors

et al. 2020

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This paper presents a methodology to design a wideband radio frequency variable gain amplifier (RF-VGA) in a low-cost SiGe BiCMOS 0.35 μm process. The circuit uses two Class A amplifiers based on second-generation controlled current conveyors (CCCII). The main feature of this circuit is the wideband input match along with a reduced NF (5.5–9.6 dB) and, to the authors’ knowledge, the lowest die footprint reported (62 × 44 μm2 area). The implementation of the RF-VGA based on CCCII allows a wideband input match without the need of passive elements. Due to the nature of the circuit, when the gain is increased, the power consumption is reduced. The architecture is suitable for designing wideband, low-power, and low-noise amplifiers. The proposed design achieves a tunable gain of 6.7–18 dB and a power consumption of 1.7 mA with a ±1.5 V DC supply. At maximum gain, the proposed RF-VGA covers from DC up to 1 GHz and can find application in software design radios (SDRs), the low frequency medical implant communication system (MICS) or industrial, scientific, and medical (ISM) bands.

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“…For the LO generation, an enhanced non-overlapping 4-phase LO generator is employed [8] as shown in Fig. 3(c).…”

Section: Non-overlapping Lo Generatormentioning

confidence: 99%

Ultra-Low Power Direct-Conversion 16 QAM Transmitter Based on Doherty Power Amplifier

Jeong

Lee

et al. 2016

IEEE Microw. Wireless Compon. Lett.

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This letter presents a fully-integrated ultra-low power (ULP) direct-conversion transmitter. For an ULP modulation, a voltage-driven passive-mixer is optimized with a super source follower (SSF) having a low-output impedance. Also, a linear Doherty PA is proposed for a good back-off efficiency. For transmitting a 16-QAM signal with PAPR of 7.5 dB, the efficiency of the Doherty PA is 14% with the ACLR of −30.1 dBc and the EVM of 5.8% at the average output power of −7.66 dBm. The baseband buffer and the mixer including the non-overlapping 4-phase clock generator consumes 0.59 and 0.51 mW, respectively, and the measured power consumption of the transmitter chain is 2.59 mW. The transmitter is implemented using 28 nm CMOS process and occupies an active area of 0.525 mm 2 .Index Terms-CMOS, direct-conversion transmitter, fullyintedgrated, low-power doherty power amplifier (PA), ultra-low power (ULP).

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A Sub-mW Fully Integrated Wide-Band Receiver for Wireless Sensor Network

Cited by 24 publications

References 9 publications

Comparison of PZN-PT, PMN-PT single crystals and PZT ceramic for vibration energy harvesting

Comparison of PZN-PT, PMN-PT single crystals and PZT ceramic for vibration energy harvesting

A Compact Size Wideband RF-VGA Based on Second Generation Controlled Current Conveyors

Ultra-Low Power Direct-Conversion 16 QAM Transmitter Based on Doherty Power Amplifier

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