A sub-2dB noise figure, 200&amp;#x2013;3700 MHz receiver for LTE-A applications

Radwan, Mostafa A.; Hossam, Mohamed; Aboudina, Mohamed M.; Hussien, Faisal

doi:10.1109/melcon.2014.6820547

Cited by 2 publications

(2 citation statements)

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“…From a system perspective, the 5G mobile system demands a single, monolithic, and ultra‐wide band receiver that covers all possible bands to reduce cost, size, and power consumption . Therefore, an ultra‐wideband (UWB) antenna and an UWB low‐noise amplifier (LNA) are required, as shown in Figure A, to form a zero‐IF front‐end that constrains the flicker noise of the baseband amplifier . A significant challenge is the design of the UWB antenna and LNA given the stringent requirements and severe trade‐offs on receiver noise and linearity performance.…”

Section: Introductionmentioning

confidence: 99%

“…7 Therefore, an ultra-wideband (UWB) antenna and an UWB low-noise amplifier (LNA) are required, as shown in Figure 1A, to form a zero-IF front-end that constrains the flicker noise of the baseband amplifier. 8,9 A significant challenge is the design of the UWB antenna and LNA given the stringent requirements and severe trade-offs on receiver noise and linearity performance. An alternative method is to simultaneously integrate both a narrowband front-end (NBF) and wideband front-end (WBF) into the 5G receiver, as shown in Figure 1B.…”

Section: Introductionmentioning

confidence: 99%

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A switch‐controlled multimode narrowband receiver RF front‐end

Wang

Zhu

et al. 2019

Int J Communication

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Summary This work illustrates a flexible and convenient method to build a multimode narrowband receiver RF front‐end by means of controlled switches, switched capacitors, and switched inductors. The front‐end comprises a dual‐gain‐mode narrowband low‐noise amplifier (LNA) and a dual‐linearity‐mode mixer. A four‐mode receiver RF front‐end constructed with the dual‐gain‐mode LNA and the dual‐linearity‐mode mixer operating in frequency band range from 1800 to 2050 MHz was demonstrated with an IBM 90‐nm CMOS process. The front‐end achieves a 1/1.6 dB noise figure, 30/20 dB power gain, and 16/−10 dBm third‐order input intercept point while draws a 5.9/3.6 mA current from a 1.8‐V supply voltage at the low noise mode and high linearity mode, respectively. The proposed technique can be employed to build an intelligent mobile system.

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Section: Introductionmentioning

confidence: 99%