2002
DOI: 10.1039/b203444c
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A study on the thermal properties and the solid state pyrolysis of the Lewis acid/base adducts [X3M·N(SnMe3)3] (X = Cl, Br; M = Al, Ga, In) and [Cl2MeM·N(SnMe3)3] (M = Al, Ga) as molecular precursors for group 13 nitride materials

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Cited by 8 publications
(12 citation statements)
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References 52 publications
(37 reference statements)
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“…The concept seems not to be limited to the synthesis of metal oxide materials. We recently reported 42 on a related method for the preparation of Group III nitride materials, e.g. GaN, by employing a corresponding destannylation reaction involving monomeric precursors of the type Me 3 Ga-N(SnMe 3 ) 3 .…”
Section: Discussionmentioning
confidence: 99%
“…The concept seems not to be limited to the synthesis of metal oxide materials. We recently reported 42 on a related method for the preparation of Group III nitride materials, e.g. GaN, by employing a corresponding destannylation reaction involving monomeric precursors of the type Me 3 Ga-N(SnMe 3 ) 3 .…”
Section: Discussionmentioning
confidence: 99%
“…16 We also described the reaction between GaCl 3 and N(SiMe 3 ) 3 and showed that the methyl transfer product [MeGaCl 2 ] 2 was isolated rather than the adduct [Cl 3 Ga{N(SiMe 3 ) 3 }]. 16 As discussed recently by Fischer et al, 15 the formation of an adduct of the type [X 3 M{N(SiMe 3 ) 3 }] is unlikely due to steric reasons and the strong N-Si bond. These factors reduce the Lewis base properties of N(SiMe 3 ) 3 , when compared with E(SiMe 3 ) 3 (E = P, As), and in turn decrease the stability of any potential adducts.…”
Section: Introductionmentioning
confidence: 87%
“…14 Polycrystalline powders of AlN, GaN and InN were obtained by prolonged pyrolysis under inert conditions above 350 ЊC. 15 However, the powders obtained were contaminated with metallic tin as shown by the X-ray powder diffraction patterns. 14, 15 Organometallic precursors, of the type [Cl 2 (Me)M{N(SnMe 3 ) 3 }] (M = Al, Ga), were also investigated.…”
Section: Introductionmentioning
confidence: 99%
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