A study on the IGBT's turn-off failure and inhomogeneous operation

Yamashita, J.; Haruguchi, E.; Hagino, H.

doi:10.1109/ispsd.1994.583642

Cited by 26 publications

(11 citation statements)

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“…So, it is of the first importance to carry out investigations on the behavior of power devices under such severe repetitive working operations. Especially, in order to be able to predetermine how many short-circuit pulses can support a given device before failure for given operating conditions it is necessary to point out ageing effects and ageing indicators of failure on the devices and the associated failure mechanisms [1][2][3][4]. Fig.…”

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confidence: 99%

Experimental investigations of trench field stop IGBT under repetitive short-circuits operations

Arab

Lefebvre

Khatir

et al. 2008

2008 IEEE Power Electronics Specialists Conference

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Robustness of IGBT transistors under repetitive short-circuit conditions is an important requirement. Shortcircuit is one of the most severe stress conditions on IGBTs since a large current flows through the device while supporting whole supply voltage. In this paper, experimental results concerning the ageing of 600 V IGBT under repetitive short circuit operations are presented. A critical energy, which is dependant on test conditions, has been already pointed out which separates two failure modes. The first one, with a cumulative degradation effect, requires some 10 4 short circuits to reach failure and the other one leads to the failure at the first short-circuit with a thermal runaway effect. This paper is focused on the first failure mode. In order to understand the ageing mechanism, 600 V IGBT dies have been packaged by Microsemi. The packaging has been made in order to make possible the characterization of some degradations by the measurement of different electrical characteristics. In this paper, we will detail effects of device ageing on on-state voltage, shortcircuit current and Al metallization degradation which leads to resistance increase.

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mentioning

confidence: 99%

Experimental investigations of trench field stop IGBT under repetitive short-circuits operations

Arab

Lefebvre

Khatir

et al. 2008

2008 IEEE Power Electronics Specialists Conference

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“…This is mostly attributed to dynamic latch‐up . Failure may occur during the OFF‐state, sometimes hundreds of microseconds after turn‐off. This failure mode is known as inhomogeneous operation or delayed failure. This failure mode is caused by the turn‐off tail current eventually leading to thermal runaway .…”

Section: Review Of Reliability Issues Reported For the Insulated‐gatementioning

confidence: 99%

Insulated gate bipolar transistor reliability testing protocol for PV inverter applications

Flicker

Kaplar

Yang

et al. 2013

Progress in Photovoltaics

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To decrease the cost of ownership of photovoltaic systems, less costly and more reliable photovoltaic inverters must be developed. Insulated gate bipolar transistors are a significant cause of inverter failures and system inefficiencies, so a thorough understanding of their strengths and weaknesses with regards to inverters is necessary. This paper summarizes the current state of experimentation surrounding the use of IGBTs in photovoltaic inverters and discusses their construction, use, lifetime, and reliability of IGBTs regularly used in photovoltaic inverters. Published 2013. This article is a U.S. Government work and is in the public domain in the USA.

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“…The excessive current density results in a device failure, characterized by a rapid collapse of the collector blocking voltage [1][2][3][4]. For this reason, the high voltage performance of IGBTs is often limited by keeping them widely inside the nominal device RBSOA.…”

Section: Introductionmentioning

confidence: 99%

“…For this reason, the high voltage performance of IGBTs is often limited by keeping them widely inside the nominal device RBSOA. The phenomena responsible for the rupture are typically attributed to the presence of an embedded bipolar transistor inside the device structure and are weakly studied in the literature due to the difficulties encountered during their experimental observation [2][3][4]: during the voltage instable phenomena, typically, the device is destroyed within nanoseconds after the voltage collapse.…”

Section: Introductionmentioning

confidence: 99%