A study on the Hot Carrier Injection Improvement of I/O Transistor

Abstract

As the scaling trend becomes accelerated in process technology for cost reduction in semiconductor chip manufacturing, the requirement for shrink technology has increased. Hot Carrier Injection (HCI) degradation for I/O transistors is most concerning part when shrink. To solve this, the effective channel length (Leff) was increased using liner oxide before Light Doped Drain (LDD) implants and optimized the tilt angle to increase Leff without E-field degradation in LDD region, satisfying the HCI specification.

A Study on the DC parameter matching according to the shrink of 0.13㎛ technology

“…If the space between source and drain is enough, the back bias can make a clear depletion, which shift the Vth. However, if there is no enough space, the depletion was not changed by the different back bias, resulting in no Vth shift even by the changes of back bias [10][11]. If use long channel devices, the narrow space between source and drain can be avoided and a clear back bias effect can be seen in Fig.…”