A study on the etch characteristics of ITO thin film using inductively coupled plasmas

Park, J.Y.; Kim, H.S.; Lee, D.H.; Kwon, Kwang‐Ho; Yeom, Geun Young

doi:10.1016/s0257-8972(00)00788-x

Cited by 29 publications

(8 citation statements)

References 7 publications

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“…Etch rates of ITO films and selectivity over PR as a function of Working Pressure Figure 6 suggests that changing the Cl 2 /C 2 H 4 mixing ratio has little effect on etch rate. C 2 H 4 used here is to produce deposition of the α-C:H polymer which provides smooth surface and sidewalls, therefore, we optimized the sidewall profiles by adjusting the Cl 2 /C 2 H 4 /Ar mixing ratio [7][8] . We adjusted the gas mixing ratio to improve the sidewall profile.…”

Section: Resultsmentioning

confidence: 99%

A study on the Cl 2 /C 2 H 4 /Ar plasma etching of ITO using inductively coupled plasma

et al. 2009

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In this study, the indium tin oxide (ITO) was etched by an inductively coupled plasma (ICP) etcher using Cl 2 /C 2 H 4 /Ar as the etching gases. The etch rates were studied as a function of RF power, inductively coupled plasma (ICP) source power, working pressure and gas mixing ratio. We found that the RF Power plays a dominant role in the elevation of the etch rates, which indicates that the ITO etching in this study is a physical mechanism dominated etching.The state of the photoresist (PR) was observed after each experiment. As expected, the high power, which generally leads to a high etch rate, would distort the PR mask, resulting in a bad etched profile of the sample. Through research, we got a relatively high etch rate (~ 200nm/min) with the shape of PR mask remain undistorted. The profile, which includes the morphology of the film sidewall and surface after the etching process, was sensitive to the gas mixing ratio. We adjusted the gas mixing ratio, and observed the profile using a scanning electron microscope (SEM), then optimal morphology was get as the Cl 2 /C 2 H 4 /Ar at the value of 30sccm/7sccm/50sccm.

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Section: Resultsmentioning

confidence: 99%

A study on the Cl 2 /C 2 H 4 /Ar plasma etching of ITO using inductively coupled plasma

et al. 2009

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“…Its size M×N = 8854×4980 pixels under a fine resolution of 100 pixels/mm. 3 n is usually 5 pixels under such resolution. Suppose ξ is 10%.…”

Section: Theory Of Defect Detection For Pctp Ito Circuits Based On 1-mentioning

confidence: 99%

“…Among all types of TPs, PCTP has become the dominant type due to its high resolution, good light transmission, multi-touch and low cost. In the PCTP manufacturing process, the most important procedure is to form patterned ITO circuits on both sides of a substrate using wet etching [2], plasma etching [3] or laser ablation [4]. However, all current etching methods will inevitably leave defects on PCTP ITO circuits, including pinholes, scratches, particles, short circuits and open circuits.…”

Section: Introductionmentioning

confidence: 99%

Real-Time Automatic Defect Inspection of PCTP ITO Circuits Using a 1-D Image Comparison Algorithm

Jiang¹,

Quan²,

Lin³

2017

IJSIP

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“…In recent studies, it was reported that ZnO, ITO, and IZO thin films were etched by using Cl 2 , HBr, IBr, BI 3 , and CH 4 /H 2 plasmas. [8][9][10][11][12][13] In the present study, the etching of GIZO thin films patterned with a photoresist (PR) was investigated using an inductively coupled plasma reactive ion etching (ICPRIE) system. The Cl 2 concentration in Cl 2 /Ar gas and other etch parameters were varied to examine the etch characteristics and etch mechanism of GIZO films.…”

Section: Introductionmentioning

confidence: 99%

Inductively Coupled Plasma Reactive Ion Etching of Gallium Indium Zinc Oxide Thin Films Using Cl₂/Ar Gas Mix

Xiao¹,

Kim²,

Kong³

et al. 2010

Jpn. J. Appl. Phys.

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Inductively coupled plasma reactive ion etching of gallium indium zinc oxide (GIZO) thin films patterned with a photoresist was studied using a Cl 2 /Ar gas. As the Cl 2 concentration was increased from pure Ar to 40% Cl 2 concentration, the etch rate of GIZO films increased, and thereafter gradually decreased. The etch rate increased with increasing coil rf power and dc bias voltage. A high degree of anisotropy was achieved with increasing coil rf power and dc-bias voltage, and decreasing gas pressure. X-ray photoelectron spectroscopy of the etched films revealed that chemical compounds were formed during the etching process, indicating that the etching of GIZO films is governed by a reactive ion etching mechanism.

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A study on the etch characteristics of ITO thin film using inductively coupled plasmas

Cited by 29 publications

References 7 publications

A study on the Cl 2 /C 2 H 4 /Ar plasma etching of ITO using inductively coupled plasma

A study on the Cl 2 /C 2 H 4 /Ar plasma etching of ITO using inductively coupled plasma

Real-Time Automatic Defect Inspection of PCTP ITO Circuits Using a 1-D Image Comparison Algorithm

Inductively Coupled Plasma Reactive Ion Etching of Gallium Indium Zinc Oxide Thin Films Using Cl₂/Ar Gas Mix

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A study on the etch characteristics of ITO thin film using inductively coupled plasmas

Cited by 29 publications

References 7 publications

A study on the Cl 2 /C 2 H 4 /Ar plasma etching of ITO using inductively coupled plasma

A study on the Cl 2 /C 2 H 4 /Ar plasma etching of ITO using inductively coupled plasma

Real-Time Automatic Defect Inspection of PCTP ITO Circuits Using a 1-D Image Comparison Algorithm

Inductively Coupled Plasma Reactive Ion Etching of Gallium Indium Zinc Oxide Thin Films Using Cl2/Ar Gas Mix

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Inductively Coupled Plasma Reactive Ion Etching of Gallium Indium Zinc Oxide Thin Films Using Cl₂/Ar Gas Mix