A study on the characteristics of hydrated La2O3 thin films with different oxidation gases on the various annealing temperature

Abstract

In order to investigate the structural and electrical properties of La 2 O 3 films deposited by O 2 and O 3 , films were hydrated in DI-water and annealed at 600 and 900°C. La 2 O 3 films deposited by O 3 showed better hydration resistance than those deposited by O 2 . The thickness of both hydrated films decreased after annealing at 600°C and increased after annealing at 900°C. The dielectric constants of the La 2 O 3 films deposited by O 3 were greater than films deposited by O 2 after annealing at 600°C and slightly less after annealing at 900°C. The leakage current density of the La 2 O 3 films deposited by O 3 was lower than those by O 2 after annealing at 900°C. To this end, La 2 O 3 films deposited by O 3 showed better dissolution resistance than O 2 for hydration experiment as a function of dipping time.

Effects of post-deposition annealing temperature and time on physical properties of metal-organic decomposed lanthanum cerium oxide thin film

“…Nevertheless, it is also the most unstable REO because the hygroscopic 3 nature of La 2 O 3 easily turns into La(OH) 3 on reaction with ambient water [15,[25][26]. The moisture absorption of La 2 O 3 films is partly attributed to the oxygen vacancies in the films [27]. [34].…”