A study on stimulated emission from erbium in silicon

Huda, M.Q.; Ali, Sharafat

doi:10.1016/j.mseb.2003.08.033

Cited by 9 publications

(5 citation statements)

References 10 publications

(15 reference statements)

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“…Together with the above results including the behavior of the emission energy, FWHM, intensity, and integral intensity, this observation confirms the presence of electrically-driven stimulated emission, although it lacks a suitable cavity [32][33][34]. We now address the electronic structure of the Er 3+ -doped Si and the carrier relaxation and transfer dynamics.…”

Section: B Optical Characterizationssupporting

confidence: 80%

“…2g). These features along with the FWHM narrowing suggest that amplified spontaneous [21,23,24] (or stimulated [33,34]) emission occurs in our Si LEDs. The emission cross-section can be thus estimated by the following equation [30,39],…”

Section: B Optical Characterizationsmentioning

confidence: 73%

“…Moreover, a super-linearly growing electroluminescence (EL) is obtained with a slope efficiency beyond 2 even at room temperature. The low threshold of ~6 mA (~0.8 A/cm 2 ) [19,20], the super-linear EL integral intensity [21][22][23], the narrowing full width at half maximum (FWHM) [24,25], and the Gaussian-like spatial emission distribution [26,27], as well as the fast radiation recombination lifetime [28][29][30][31], confirm the presence of stimulated emission involving transitions related to the Er 3+ [32][33][34]. Time-resolved PL (TR-PL) and photocurrent (PC) measurements reveal the relaxation dynamics of the nonequilibrium carriers from the Si host to the Er 3+ precipitates.…”

Section: Introductionmentioning

confidence: 94%

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Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes

Hong

Wen

et al. 2021

Photon. Res.

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：Silicon-based light sources including light-emitting diodes (LEDs) and laser diodes (LDs) for information transmission are urgently needed for developing monolithic integrated silicon photonics. Silicon doped by ion implantation with erbium ions (Er 3+ ) is considered a promising approach, but suffers from an extremely low quantum efficiency. Here we report an electrically pumped superlinear emission at 1.54 µm from Er/O-doped silicon planar LEDs, which are produced by applying a new deep cooling process. Stimulated emission at room temperature is realized with a low threshold current of ~6 mA (~0.8 A/cm 2 ). Time-resolved photoluminescence and

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Section: B Optical Characterizationssupporting

confidence: 80%

Section: B Optical Characterizationsmentioning

confidence: 73%

Section: Introductionmentioning

confidence: 94%

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Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes

Hong

Wen

et al. 2021

Photon. Res.

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“…Not much work, either in theories or experiments have been done on this topic. We have shown in previous publications that sustained stimulated emission in erbium doped silicon is feasible [10]- [11]. In this paper, we show that, laser action in Si:Er is theoretically possible with the present technology of erbium incorporation.…”

Section: Introductionsupporting

confidence: 52%

1.54 μm lasing from silicon in presence of Erbium doping

Huda

Hossain

2008

2008 International Conference on Electrical and Computer Engineering

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Lasing at 1.54 μm from Erbium doped silicon has been studied. A model has been developed for the mechanism of energy transfer to erbium by electron-hole recombination through erbium sites. Emission rates of erbium through intra 4f shell transitions by spontaneous and stimulated processes have been equated with the excitation rates. Detailed analysis on rate equations show the feasibility of achieving population inversion and lasing threshold for incorporation of 10 19 cm −3 of optically active erbium sites. Low threshold current densities of the order of A/cm 2 has been estimated for optimized lasing conditions. Linear increase of laser output with excitation current has been simulated. Modulation compatibility of the erbium doped silicon lasing system has been studied by introducing small signal components at various operating conditions. It was found that direct modulation of the 1.54 μm erbium emission with frequencies up to Gega hertz level is feasible. The 3 dB bandwidth of laser response was found to be a strong function of the power output. Rate equations of laser operation were also solved for large signal conditions. Turn-on delays of the order of tens of nanoseconds have been estimated.

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“…[1][2][3][4][5] Silicon nanoclusters ͑Si-ncs͒ formed in silicon rich oxide ͑SRO͒ host show promise of working as efficient sensitizers for Er atoms. [1][2][3][4][5] Silicon nanoclusters ͑Si-ncs͒ formed in silicon rich oxide ͑SRO͒ host show promise of working as efficient sensitizers for Er atoms.…”

mentioning

confidence: 99%

Multiple excitation of silicon nanoclusters during erbium sensitization process in silicon rich oxide host

Huda

Subrina

2011

Applied Physics Letters

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Extending the nanocluster-Si/erbium sensitization distance in Er-doped silicon nitride: The role of Er-Er energy migration Appl. Phys. Lett. 95, 221101 (2009); 10.1063/1.3259723 Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters Effect of ion-irradiation induced defects on the nanocluster Si ∕ Er 3 + coupling in Er-doped silicon-rich silicon oxide Appl. Phys. Lett. 91, 021909 (2007);

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A study on stimulated emission from erbium in silicon

Cited by 9 publications

References 10 publications

Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes

Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes

1.54 μm lasing from silicon in presence of Erbium doping

Multiple excitation of silicon nanoclusters during erbium sensitization process in silicon rich oxide host

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A study on stimulated emission from erbium in silicon

Cited by 9 publications

References 10 publications

Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes

Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes

1.54 &#x03BC;m lasing from silicon in presence of Erbium doping

Multiple excitation of silicon nanoclusters during erbium sensitization process in silicon rich oxide host

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1.54 μm lasing from silicon in presence of Erbium doping