Stimulated emission at 1.54  μm from erbium/oxygen-doped silicon-based light-emitting diodes

Hong, Jin Ki; Wen, Huimin; He, J.; Liu, Jingquan; Dan, Yaping; Tomm, Jens W.; Yue, Fangyu; Chu, Junhao; Duan, Chun‐Gang

doi:10.1364/prj.417090

Cited by 11 publications

(4 citation statements)

References 46 publications

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“…This scenario is consistent with our recent observations that the PL spectrum from the Er/O doped Si has a surprisingly wide broad emission band (0.6-1.1 eV) in addition to the widely reported strong Er 3+ emission peak at 1536 nm. [45] Similar quasicontinuous band was also observed in sulfur-doped silicon. [46] No detectable photocurrent was observed for the sample treated by RTA even when the light at the highest possible intensity is coupled from our tunable laser (Agilent 81640A) into the detector waveguide (upper waveguide in Figure 1a).…”

Section: Resultssupporting

confidence: 68%

Efficient Er/O Doped Silicon Photodiodes at Communication Wavelengths by Deep Cooling

Zhao

Lin

Gao

et al. 2021

Adv Materials Technologies

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However, the spectral responses of silicon photodiodes are limited to wavelengths shorter than 1.1 µm, significantly shorter than communication wavelengths (≈1.55 µm). Approaches have been explored to extend the spectral range of silicon-based photodetectors to communication wavelengths. One involves incorporating chalcogen dopants into Si through picosecond or femtosecond laser irradiation. [19][20][21][22] Although the room temperature responsivity of 35 mA W −1 at 1550 nm was achieved using this process, it is not suitable for the integrated circuit application due to the complicated laser annealing process and the noncrystalline Si surface formed in the process. [20,23] Recently, pulsed laser treatment using nanosecond laser has been reported to form singlecrystalline surface on gold ion doped silicon. The resultant Si:Au photodiodes have the maximum room temperature EQE of 9.3 × 10 −5 at communication wavelengths. [24] Nevertheless, Au is an important detrimental elements to silicon-based devices and therefore incompatible with the CMOS process. [25,26] Although silicon hyper doped with silver was made into photodiodes, [27] doping silicon with erbium (often with oxygen) [28][29][30] is particularly interesting for photodetection since Er/O doped silicon can be also potentially made into silicon light sources at communication wavelength. [31][32][33][34][35] Traditionally, Er/O doped silicon suffers from Er/O precipitation after standard rapid thermal annealing (RTA), which results in strong nonradiative recombination. [36][37][38] Consequently, the RTA-treated Er/O silicon cannot emit or detect photons at communication wavelengths efficiently at room temperature. [28,36] Recently, we employed a deep cooling (DC) process to treat the Er/O implanted silicon. [31] The processed samples exhibit a strong photoluminescence at room temperature, two orders of magnitude higher than the samples treated by standard RTA process. In this work, we explore the possibility to use Er/O doped silicon treated by the DC process for high-performance photodetection at communication wavelengths. The samples were first annealed at high-temperature (≈950 °C) and cooled Wide band infrared photodetectors have found a wide range of applications in sensing, communication, and spectral analysis. However, the commonly used infrared photodetectors are based on Ge and III-V semiconductors which are not complementary metal-oxide-semiconductor (CMOS) compatible and therefore have limited applications. There is a huge demand for silicon-based infrared photodetectors due to its low-cost and compatibility with CMOS processes. Nevertheless, the spectral bandwidth of Si photodetectors is limited to wavelengths below 1.1 µm. Several approaches are developed to extend Si photodetection bandwidth to communication wavelengths. Er/O doped Si is a promising approach which, however, suffers from low infrared responsivities at room temperature when the samples are treated with the standard rapid thermal annealing (RTA). In this work, a novel deep cooling...

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Section: Resultssupporting

confidence: 68%

Efficient Er/O Doped Silicon Photodiodes at Communication Wavelengths by Deep Cooling

Zhao

Lin

Gao

et al. 2021

Adv Materials Technologies

Self Cite

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“…doped Si LED with superluminescent (stimulated) emission [92]. Alternatively, Er silicate nanocrystals codeposited with Si-NC allow reaching efficient electroluminescence at 1,540 nm in MOS devices [93].…”

Section: Er-doping Of Si-ncmentioning

confidence: 99%

Thirty Years in Silicon Photonics: A Personal View

Pavesi

2021

Front. Phys.

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Silicon Photonics, the technology where optical devices are fabricated by the mainstream microelectronic processing technology, was proposed almost 30 years ago. I joined this research field at its start. Initially, I concentrated on the main issue of the lack of a silicon laser. Room temperature visible emission from porous silicon first, and from silicon nanocrystals then, showed that optical gain is possible in low-dimensional silicon, but it is severely counterbalanced by nonlinear losses due to free carriers. Then, most of my research focus was on systems where photons show novel features such as Zener tunneling or Anderson localization. Here, the game was to engineer suitable dielectric environments (e.g., one-dimensional photonic crystals or waveguide-based microring resonators) to control photon propagation. Applications of low-dimensional silicon raised up in sensing (e.g., gas-sensing or bio-sensing) and photovoltaics. Interestingly, microring resonators emerged as the fundamental device for integrated photonic circuit since they allow studying the hermitian and non-hermitian physics of light propagation as well as demonstrating on-chip heavily integrated optical networks for reconfigurable switching applications or neural networks for optical signal processing. Finally, I witnessed the emergence of quantum photonic devices, where linear and nonlinear optical effects generate quantum states of light. Here, quantum random number generators or heralded single-photon sources are enabled by silicon photonics. All these developments are discussed in this review by following my own research path.

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“…Among quantum emitters, trivalent erbium ions (Er 3+ ) are of great interest for their stable, relatively sharp, room temperature emission at 1.5 μm, which matches the window for minimum loss transmission in silica [ 1 ] Owing to this property, Er is widely used for the realization of optoelectronic devices, such as on‐chip optical amplifiers, light‐emitting diodes, or lasers, [ 2–6 ] and more recently for the development of single‐photon sources at telecom wavelengths, which are of paramount importance for the implementation of optical fiber‐based quantum networks. [ 7,8 ] Nonetheless, some limitations hamper the efficient employment of erbium in photonic devices, and in particular, its low, resonant, excitation cross section (of the order of

\left(10\right)^{- 21} \left(\text{cm}\right)^{2}

) and the long lifetime of the

^{4} I_{13 / 2}

excited state (of the order of 10 ms), which reduces the photon emission rate and makes it prone to nonradiative recombination processes.…”

Section: Introductionmentioning

confidence: 99%

Active Modulation of Er³⁺ Emission Lifetime by VO₂ Phase‐Change Thin Films

Kalinic,

Cesca,

Lovo

et al. 2023

Advanced Photonics Research

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The active modulation of optical response of quantum emitters at the nanoscale is of paramount importance to realize tunable light sources for nanophotonic devices. Herein, a thin film of phase‐change material (VO2) is coupled to a 20 nm‐thick silica layer embedding Er3+ ions, and it is demonstrated how the active tuning of the local density of optical states near the erbium emitters provided by the thermally induced semiconductor‐to‐metal transition of VO2 can be used to dynamically control the Er3+ emission lifetime at telecom wavelength (1.54 μm). A decay rate contrast of a factor 2 is obtained between high temperature (90 °C), when VO2 is metallic, and room temperature, when VO2 is semiconductor, in agreement with calculations performed with the classical dipole oscillator analytical model. A hysteretic behavior is observed by measuring the Er3+ lifetime as a function of the temperature, whose parameters are consistent with those of grazing incidence X‐ray diffraction and optical transmittance measurements. The fractions of Er3+ ions that couple with VO2 in each phase at the different temperatures are determined by the analysis of the temporal decays. The results make the investigated system an optimal candidate for the development of tunable photon sources at telecom wavelength.

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Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes

Cited by 11 publications

References 46 publications

Efficient Er/O Doped Silicon Photodiodes at Communication Wavelengths by Deep Cooling

Efficient Er/O Doped Silicon Photodiodes at Communication Wavelengths by Deep Cooling

Thirty Years in Silicon Photonics: A Personal View

Active Modulation of Er³⁺ Emission Lifetime by VO₂ Phase‐Change Thin Films

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Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes

Cited by 11 publications

References 46 publications

Efficient Er/O Doped Silicon Photodiodes at Communication Wavelengths by Deep Cooling

Efficient Er/O Doped Silicon Photodiodes at Communication Wavelengths by Deep Cooling

Thirty Years in Silicon Photonics: A Personal View

Active Modulation of Er3+ Emission Lifetime by VO2 Phase‐Change Thin Films

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Active Modulation of Er³⁺ Emission Lifetime by VO₂ Phase‐Change Thin Films