A study on IGBT junction temperature (Tj) online estimation using gate-emitter voltage (Vge) at turn-off

Sundaramoorthy, Vinoth Kumar; Bianda, Enea; Bloch, Richard; Angelosante, Daniele; Nistor, I.; Riedel, Gernot; Zurfluh, Franz; Knapp, G.; Heinemann, Alexander

doi:10.1016/j.microrel.2014.06.002

Cited by 27 publications

(10 citation statements)

References 10 publications

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“…During the AFT, DUT is placed in the actual TC power module and is then connected to the test platform. In AFT, F is calculated from the observed UCES [7], as shown in Equation (3).…”

Section: Weibull Distributionmentioning

confidence: 99%

“…Temperature changes causes shear thermal stress, while shear thermal stress causes liftoffs and cracks [6]. Due to the encapsulation, internal liftoffs and cracks cannot be observed directly; several sensitive parameters have been considered to represent the fatigue characteristics instead, such as the IGBT saturation voltage drop (U CES ) [7], SOA [8], thermal resistance between IGBT junction and device substrate (R th [9], threshold voltage of the IGBT gate [10], etc. These methods are based on the one-to-one relationship between fatigue signatures and fatigue levels.…”

Section: Introductionmentioning

confidence: 99%

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Fault Prediction Model of High-Power Switching Device in Urban Railway Traction Converter with Bi-Directional Fatigue Data and Weighted LSM

et al. 2019

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The switching device is relatively weakest in the traction converter, and this paper aims at the fault prediction of it. Firstly, the mathematical distribution is analyzed based on the results that were obtained in electro thermal simulation and a single-directional accelerated fatigue test. Then, the accelerated fatigue test with bi-directional fatigue current is proposed, the data from which reflects the accelerating effect from FWD on the device aging process. The analytical model of fatigue process is fitted with the data that were obtained in the test. In order to shorten the test time consumption, we propose a weighted least squares method (LSM) to fit the failure data. Finally, the prediction model is presented with the consideration of fatigue signature and Arrhenius temperature factor.

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“…During the AFT, DUT is placed in the actual TC power module and is then connected to the test platform. In AFT, F is calculated from the observed UCES [7], as shown in Equation (3).…”

Section: Weibull Distributionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fault Prediction Model of High-Power Switching Device in Urban Railway Traction Converter with Bi-Directional Fatigue Data and Weighted LSM

et al. 2019

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“…A number of studies have been published on the use of TSEPs for Silicon (Si) MOSFETs and IGBTs power devices, including the monitoring of dI/dt during turn-on or dV/dt during turn-off transients [14]- [16], Miller capacitance discharge time [17], threshold voltage [18]- [20], on-state voltage drop [21]- [23], voltage across source/emitter parasitic inductance [24], internal gate resistance [25]- [26], gate drive turn-on transients [27].…”

Section: Index Terms-power Semiconductor Devices Condition Monitorinmentioning

confidence: 99%

Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

Griffo

Wang

Colombage³

et al. 2018

IEEE Trans. Ind. Electron.

117

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interests range from motion control and electromechanical energy conversion to electric drives for applications in automotive, renewable energy, household appliances and aerospace sectors. He is a fellow of the IET and a senior member of IEEE.Kalhana Colombage received the M.Eng. degree in electronic engineering with employment experience from the University of Sheffield, Sheffield, U.K., in 2010, where he received the Ph.D. degree for his thesis "Design and control of on-board bidirectional battery chargers with islanding detection for electric vehicle applications" in 2015.

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“…Insulated Gate Bipolar Transistor(IGBT) is a kind of power device that consists of Bipolar Junction Transistor(BJT) and MOS transistor. It is selected as the power switch due to its advantage of low driven power, low saturation voltage and fast switching speed [4][5] . In this design, the module of 1HW25N120R2 IGBT was applied, which could support the maximum current of 30A and the permissible voltage of 300V.…”

Section: Fig 1 Schematic Diagram Of the Systemmentioning

confidence: 99%

A high-power ultrasonic pulser-receiver for concrete non- destructive testing

Han¹,

Xie²,

Yin³

et al. 2015

Proceedings of the 3rd International Conference on Advances in Energy and Environmental Science 2015

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Abstract. In order to improve the ultrasonic test penetration in the concrete members, a kind of high-power ultrasonic pulser-receiver was designed. With the instantaneous high-voltage pulse by capacitor of charging and discharging, the transformed voltage can reach a peak of 800v. A specific receiver was designed to realize multi-channel synchronous acquisition, storage and data transfer.Experimental results prove that a good SNR (Signal to Noise Ratio) signal can be obtained. Along with other advantages such as easy manufacture and operation, cost efficiency, the proposed scheme may have a wide application in the non-destructive ultrasonic evaluation of concrete members.

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A study on IGBT junction temperature (Tj) online estimation using gate-emitter voltage (Vge) at turn-off

Cited by 27 publications

References 10 publications

Fault Prediction Model of High-Power Switching Device in Urban Railway Traction Converter with Bi-Directional Fatigue Data and Weighted LSM

Fault Prediction Model of High-Power Switching Device in Urban Railway Traction Converter with Bi-Directional Fatigue Data and Weighted LSM

Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

A high-power ultrasonic pulser-receiver for concrete non- destructive testing

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