Abstract:Abstract. The program consistency of high density gate-oxide anti-fuse PROM (programmable read only memory) memory cell is considered in this paper. To solve this problem, we do research on the mechanism and models of gateoxide break down. A test chip based on 2T memory cell is also designed for the experiment. During the test, we have found that the program consistency of 2T cell is really pessimistic. What's more, the program voltage has effect on the consistency. Through research and test, we have got the o… Show more
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