A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs/GaSb type-II superlattices

Safa, Sara; Asgari, Asghar; Faraone, Lorenzo

doi:10.1063/1.4817088

Cited by 11 publications

(6 citation statements)

References 26 publications

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“…Despite these impressive progresses, experimental results on SL detectors have not yet reached their theoretical performances that are strongly dependent to their residual background carrier concentration. Consequently, fundamental studies on MWIR SL material, such as minority carrier lifetime [5][6][7], in plane and vertical effective masses [8] and mobilities [9,10], residual background carrier concentration [11][12][13], have been investigated for a better understanding of the carrier transport in this minority carrier detector. Recently, influence of the SL period thickness and composition on the electrical and optical properties of MWIR SL photodetectors has been reported [14].…”

Section: Introductionmentioning

confidence: 99%

Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p–n junction

Delmas

Rodriguez

Taalat

et al. 2015

Infrared Physics & Technology

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Midwave infrared (MWIR) InAs/GaSb superlattice (SL) photodiode with a dopant-free p-n junction was fabricated by molecular beam epitaxy on GaSb substrate. Depending on the thickness ratio between InAs and GaSb layers in the SL period, the residual background carriers of this adjustable material can be either n-type or p-type. Using this flexibility in residual doping of the SL material, the p-n junction of the device is made with different nonintentionally doped (nid) SL structures. The SL photodiode processed shows a cutoff wavelength at 4.65µm at 77K, residual carrier concentration equal to 1.75x10 15 cm-3 , dark current density as low as 2.8x10-8 A/cm 2 at 50 mV reverse bias and R0A product as high as 2x10 6 .cm 2. The results obtained demonstrate the possibility to fabricate a SL pin photodiode without intentional doping the pn junction. Highlights :-MWIR SL photodiode was made using the flexibility properties of InAs/GaSb Superlattice-MWIR SL photodiode was made without intentional doping the pn junction-Electrical and electro-optical characterizations of MWIR pin SL photodiode made of dopant-free p-n junction have been reported

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Section: Introductionmentioning

confidence: 99%

Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p–n junction

Delmas

Rodriguez

Taalat

et al. 2015

Infrared Physics & Technology

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“…where, c el denotes the spherically averaged elastic constant and Ξ D represents the acoustic deformation potential, which is obtained by the CB shift (in eV) per unit strain, owing to the acoustic waves (17). To calculate the acoustic deformation potential (Ξ D ), we use the following relation ( 17)…”

Section: Acoustic Deformation Potential Scatteringmentioning

confidence: 99%

“…The existence of the interface roughness in a T2SL [17,18,23,29,66] structure leads to endemic variations in InAs well widths, causes modulation of the associated energy levels and introduces an unstable potential for the motion of the confined electrons. The IRS mechanism can occur due to the imperfections that arise during the growth of the material.…”

Section: Interface Roughness Scatteringmentioning

confidence: 99%

“…Despite the fact that the mobility of the photogenerated minority carriers has a significant impact on the performance of IR photodetectors, carrier transport in technologically relevant T2SL structures has not as extensively been explored. Recent explorations in this context [17][18][19][20][21][22][23] which include carrier mobility calculations [24], do not conclusively bring to the fore structure-specific impact of important scattering mechanisms such as Piezoelectric (PZ), polar optical phonon (POP), acoustic deformation potential (ADP) scattering mechanisms and most importantly the interface roughness scattering (IRS).…”

Section: Introductionmentioning

confidence: 99%

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Advancing carrier transport models for InAs/GaSb type-II superlattice MWIR photodetectors

Kumar¹,

Mandia²,

Singh³

et al. 2023

Preprint

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In order to provide the best possible performance, modern infrared photodetector designs necessitate extremely precise modeling of the superlattice absorber region. We advance the Rode's method for the Boltzmann transport equation in conjunction with the k.p band structure and the envelope function approximation for a detailed computation of the carrier mobility and conductivity of layered type-II superlattice structures, using which, we unravel two crucial insights. First, the significance of both elastic and inelastic scattering mechanisms, particularly the influence of the interface roughness and polar optical phonon scattering mechanisms in technologically relevant superlattice structures. Second, that the structure-specific Hall mobility and Hall scattering factor reveals that temperature and carrier concentrations significantly affect the Hall scattering factor, which deviates significantly from unity even for small magnetic fields. This reinforces the caution that should be exercised when employing the Hall scattering factor in experimental estimations of drift mobilities and carrier concentrations. Our research hence offers a comprehensive microscopic understanding of carrier dynamics in such technologically relevant superlattices. Our models also provide highly accurate and precise transport parameters beyond the relaxation time approximation and thereby paving the way to develop physics-based device modules for mid-wavelength infrared photodetectors.

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“…Although, previously these scattering mechanisms were studied separately in some specified superlattices [17,20,21] , but a plenary view is needed in order to illustrate the low temperature scattering mechanisms in relation with wells and barriers thicknesses in a SL. For this purpose, an accurate way is needed to calculate the electronic band structure and wave functions which can be achieved through numerical Finite Difference method for a K.P Hamiltonian.…”

Section: Introductionmentioning

confidence: 99%

Effects of ionized impurity and interface roughness scatterings on the electron mobility in InAs/GaSb type II superlattices at low temperatures

Safa

Asgari

2016

Mod. Phys. Lett. B

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The in-plane electron mobility has been calculated in InAs/GaSb type-II superlattices at low temperatures. The interface roughness scattering and ionized impurity scattering are investigated as the dominant scattering mechanisms in limiting the electron transport at low temperatures. For this purpose, the band structures and wave functions of electrons in such superlattices are calculated by solving the K.P Hamiltonian using the numerical Finite Difference method. The scattering rates have obtained for different temperatures and structural parameters. We show that the scattering rates are high in thin-layer superlattices and the mobility rises as the temperature increases in low-temperature regime.

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A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs/GaSb type-II superlattices

Cited by 11 publications

References 26 publications

Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p–n junction

Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p–n junction

Advancing carrier transport models for InAs/GaSb type-II superlattice MWIR photodetectors

Effects of ionized impurity and interface roughness scatterings on the electron mobility in InAs/GaSb type II superlattices at low temperatures

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