A Study of the Radiation Hardness of Si and SiC Detectors Using a Xe Ion Beam

Hrubčín, L.; Gurov, Yu. B.; Затько, Б.; Іванов, О. М.; Митрофанов, С. В.; Rozov, S.; Sandukovsky, V. G.; Semin, Vasiliy; Skuratov, V.A.

doi:10.1134/s0020441218060192

Cited by 5 publications

(2 citation statements)

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“…The silicon carbide (SiC) neutron detector is much better radiation resistance and environmental tolerance compared to silicon or germanium detectors [21], [22], due to their good thermal conductivity, large displacement energy, and high breakdown electric field [23], [24], [25]. In addition, their lower manufacturing cost and higher maturity of process technology than diamond and gallium nitride (GaN) detectors make them an excellent choice for neutron detection [26].…”

Section: Introductionmentioning

confidence: 99%

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

et al. 2023

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In this article, we propose a double-trenchtype silicon carbide (SiC) neutron detector and model it using the concept of a unit cell on the GEANT4 platform. When the low-level discriminator (LLD) value was fixed at 300 keV, the structural parameters of this double-trench-type SiC neutron detector were optimized to maximize the intrinsic detection efficiency. Compared with the single trench type, the doubletrench-type SiC neutron detector can significantly improve the neutron intrinsic detection efficiency within a limited trench depth, which was especially suitable for the current technological status that SiC materials can only be used for shallow trench etching. Apart from optimizing the structural parameters, the energy deposition spectra in the SiC detector region by the generated secondary charged particles upon thermal neutron interaction in neutron conversion materials ( 10 B and 6 LiF) have also been estimated. It can be found that the double-trench-type SiC neutron detector counts significantly increased in the low-energy range, while the counts in the high-energy range are only slightly decreased. This is also the essential reason why the intrinsic detection efficiency of the double-trench-type SiC neutron detector was significantly improved compared to the single-trench-type SiC neutron detector.

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Section: Introductionmentioning

confidence: 99%

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

et al. 2023

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“…N Owadays, SIlicon Carbide (SiC) is among the semiconductors used as sensors in radiation detection [1], [2]. The various researches on the silicon carbide pixilation thanks to the reduction and the integration capacity of the reading electronics has allowed to improve its competitive position compared to photomultipliers, ionization chambers and film dosimetry.…”

Section: Introductionmentioning

confidence: 99%

Front End Electronics for Radiation Detectors Based on SiC: Application to High Dose per Pulse Charged Particle Beam Current Measurement

et al. 2022

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In high dose per pulse charged particle beams, all online detectors saturate due to ion recombination. It is therefore impossible to count detector pulses separately. Silicon carbide due to its high band gap, high thermal conductivity and high displacement energy, is seen as an alternative. Analyzing waveforms in real time is challenging in terms of bandwidth, measurable energy range, sensor size, data rate. In this contexte, an Analog Front-End (AFE) was designed for radiation signal processing. It is based on a TransImpedance Amplifier (TIA) and Charge Sentitive Amplifier (CSA) to analyze the shape of generated signal. The methodology used to characterize AFE for high detector capacitance is described. The results extracted from simulations, experimental and measurements in radiative environment are also presented.

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Silicon carbide detectors for high flux neutron monitoring at near-core locations

Kandlakunta

Tan

Smith

et al. 2020

Nuclear Instruments and Methods in Physics Research Section A:

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A Study of the Radiation Hardness of Si and SiC Detectors Using a Xe Ion Beam

Cited by 5 publications

References 5 publications

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

Front End Electronics for Radiation Detectors Based on SiC: Application to High Dose per Pulse Charged Particle Beam Current Measurement

Silicon carbide detectors for high flux neutron monitoring at near-core locations

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