A study of the process of decomposition of supersaturated GaAs:Fe solid solution by scanning probe microscopy

Decomposition of a supersaturated solid solution of Fe in GaAs

“…In this study, the process was followed using TEM and MFM in an external magnetic field. The present find ings correlate with earlier results [5]. Just as previously [5], we observe inclusions similar in size and shape after the solid solution decomposition.…”

“…The decomposition of an Fe solution in GaAs was studied previously by scanning probe microscopy [5]. In this study, the process was followed using TEM and MFM in an external magnetic field.…”

“…The initial electron concentration in the wafers was 6 × 10 16 and 1 × 10 17 cm -3 , and the dislocation density was 5 × 10 4 cm -2 . Fe was diffused from both sides of the wafers, so that the Fe profiles were saddle shaped [5]. As a result of the compensation with iron, the carrier concentration in the GaAs wafers was 10 4 to 10 5 cm -3 .…”

“…The decomposition may influence the proper ties of the material; for example, it may increase the carrier lifetime through band corrugation [4]. The structure of Fe doped GaAs was studied earlier by atomic force microscopy (AFM) [5]. Annealing of GaAs-Fe samples at 900°С for 3 h was found to pro duce disk shaped second phase inclusions up to 1 μm in diameter.…”

Application of laser module with driver based on avalanche S-diode for light-emitting diode structure characterization

“…The device is based on n-GaAs doped with deep acceptor centers [1], [10]- [12]. It switches under microplasma impact ionization regime due to inhomogeneous distribution of impurity [13], [14]. This process causes relatively poor stability of S-diode, i.e.…”