Decomposition of a supersaturated solid solution of Fe in GaAs

Prudaev, I. А.; Khludkov, S. S.; Гутаковский, А. К.; Новиков, В. А.; Толбанов, О. П.; Ивонин, И. В.

doi:10.1134/s0020168512020161

Cited by 6 publications

(3 citation statements)

References 8 publications

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“…For Fe‐doped GaAs structures, the submicron Fe inclusions earlier were found to be present in the (001) planes. [ 19,20 ] Other experimental data show that Fe diffusion in GaAs increases the dislocation density by more than an order of magnitude. [ 21 ]…”

Section: Methods Of Researchmentioning

confidence: 99%

“…For Fe-doped GaAs structures, the submicron Fe inclusions earlier were found to be present in the (001) planes. [19,20] Other experimental data show that Fe diffusion in GaAs increases the dislocation density by more than an order of magnitude. [21] The mesh spacing along the X coordinate was varied: closer to the inhomogeneity region, it decreased to ΔX values that were much lower than the dimensions of the inhomogeneity selected.…”

Section: Simulationmentioning

confidence: 99%

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Microplasma Breakdown in GaAs‐Based Avalanche S‐Diodes Doped with Deep Fe Acceptors

Prudaev

Kopyev

Oleinik

2023

Physica Status Solidi (b)

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The article reports investigations into the microplasma breakdown in GaAs‐based avalanche S‐diodes doped with deep Fe acceptor impurities. The experiment shows the effect of current limitation in a reverse I–V curve with “soft” avalanche breakdown. It proposes 2D single microplasma models and calculates I–V curves of diodes with a deep impurity during microplasma breakdown. By comparing experimental and calculation data, authors propose an explanation for the effect of current limitation during avalanche breakdown. The effect is associated with capture of avalanche holes at negatively charged Fe centers, which enhances the depletion region and minimizes the maximum electric field in a reverse‐biased p–n junction of an S‐diode.

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Section: Methods Of Researchmentioning

confidence: 99%

Section: Simulationmentioning

confidence: 99%

Microplasma Breakdown in GaAs‐Based Avalanche S‐Diodes Doped with Deep Fe Acceptors

Prudaev

Kopyev

Oleinik

2023

Physica Status Solidi (b)

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“…The device is based on n-GaAs doped with deep acceptor centers [1], [10]- [12]. It switches under microplasma impact ionization regime due to inhomogeneous distribution of impurity [13], [14]. This process causes relatively poor stability of S-diode, i.e.…”

Section: Methodsmentioning

confidence: 99%

Application of laser module with driver based on avalanche S-diode for light-emitting diode structure characterization

Kopyev

Prudaev

Avdochenko

2015

2015 International Siberian Conference on Control and Communications (SIBCON)

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This work presents results of experiments on electrical pumping of laser diode by driver based on avalanche Sdiode. Nine-fold increase of pulse power of semiconductor commercial InGaN/GaN laser diode at pulse duration 15-20 ns and frequency 90 kHz was achieved. Proposed laser module was used in set of tools for light-emitting diode structures characterization as a pumping source for photoluminescence measurements. Finally comparative test measurements of quantum efficiency of conventional light-emitting structures were conducted using electroluminescence and photoluminescence regimes. Measurements have shown promising results for developed laser module for light-emitting diode structures characterization.

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Prospects for Application of Gallium Arsenide Doped with Transition Metals as a Material for Spintronics

Khludkov

Prudaev

Толбанов

2018

Nanostructure Science and Technology

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Decomposition of a supersaturated solid solution of Fe in GaAs

Cited by 6 publications

References 8 publications

Microplasma Breakdown in GaAs‐Based Avalanche S‐Diodes Doped with Deep Fe Acceptors

Microplasma Breakdown in GaAs‐Based Avalanche S‐Diodes Doped with Deep Fe Acceptors

Application of laser module with driver based on avalanche S-diode for light-emitting diode structure characterization

Prospects for Application of Gallium Arsenide Doped with Transition Metals as a Material for Spintronics

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