A study of the kinetic properties of nanostructured intercalates of AgxIn4Se3 aimed at the creation of photodetectors

Seredyuk, B.

doi:10.33577/2312-4458.11.2014.52-55

Cited by 3 publications

(4 citation statements)

References 5 publications

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“…The influence of metal atoms of 3d-iron group on the matrix of semiconductor layered crystals was studied in details in [4]. Some peculiarities of the behavior of In4Se3 doped by metallic impurities have been discussed in [5,8,9]. To investigate the effect of metallic impurities on the layered In4Se3 structure EPR spectra are outlined in the Figures below.…”

Section: Presenting Main Materialsmentioning

confidence: 99%

“…In-Se atoms form layers with strong covalent bonds, while interlayer space is filled with a weak Van-der-Waals bond, so processes across the layers can be regarded as a perturbation to the ones along the layers. It leads to strong anisotropy of the properties of these structures [4,5]. The discovery of single-atomic layer graphene [6] has led to a surge of interest in other anisotropic crystals with strong inplane bonds and weak, van der Waals-like, inter-layer coupling.…”

Section: Introductionmentioning

confidence: 99%

“…Interest in these systems is motivated partly by the possibility of combining them with graphene aiming the creation of 2D electronic devices, e.g., field effect transistors with high on-off switching ratios and memory cells [7]. In recent work these materials were shown to possess magnetoresistive properties and were proved to be useful for magnetic sensors [4,5,8,9]. Nowadays sensitive magnetic sensors are utilized in plenty of technical systems, including modern anti-tank missiles to identify the center of the target area and a minimal armor region.…”

Section: Introductionmentioning

confidence: 99%

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BRIEF OVERVIEW OF THE EPR SPECTRA OF In4Se3 INTERCALATED BY Cu

Seredyuk¹,

Stefaniuk²

2018

MEM

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The EPR studies of electrical and magnetic properties of In4Se3 intercalated by copper are outlined in this article. Possibilities of using magnetic field sensors based on InSe structures for revealing the armour military vehicles are discussed. The impact of metal impurities on the layered structure of the semiconductor material as referred to the strong covalent bond within the layers as well as the weak van-der-Waals bond in the interlayer space is studied. EPR spectra for In4Se3 crystal with the impurities of Cu at room temperature are analyzed.

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Section: Presenting Main Materialsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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BRIEF OVERVIEW OF THE EPR SPECTRA OF In4Se3 INTERCALATED BY Cu

Seredyuk¹,

Stefaniuk²

2018

MEM

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“…The influence of metal atoms of 3d-iron group on the matrix of semiconductor layered crystals was studied in details in [4]. Some peculiarities of the behavior of In4Se3 doped by metallic impurities have been discussed in [5,8,9]. Impedance spectroscopy measurements in the frequency range of 10 -3 ÷ 10 6 Hz were carried out using a measuring complex "AUTOLAB" by the company "ECO CHEMIE".…”

Section: Fig 1 Inse Structure (A=b=4002 å C=24946 å) Intercalatementioning

confidence: 99%

Influence of the metallic impurities in a3b6 type layered semiconductors on their electrical, magnetic and structural properties

Serediuk¹,

Seredyuk²

2017

MEM

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The applications of magnetoresistive structures based on semiconductor crystals of InSe for high precision measurement of the magnetic field are outlined in this article. Possibilities of using magnetic field sensors based on InSe structures for revealing the armour military vehicles are discussed. The impact of metal impurities on the layered structure of the semiconductor material as referred to the strong covalent bond within the layers as well as the weak vander-Waals bond in the interlayer space is studied. Bode diagrams for InSe crystal with the impurities of nickel at different temperatures from liquid nitrogen to room temperatures, are analyzed. Topological images of crystal surface obtained by atomic force microscopy confirm the layered structure of nickel-intercalated InSe.

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Analysis of the electrical, magnetic and structural properties of A3B6 type layered semiconductor crystals intercalated with metals with reference to their military applications

Seredyuk¹,

Ivashchyshyn²,

Kulyk³

2018

Military Technical Collection

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Magnetic sensors are key elements in many security and military systems. Magnetic sensors are often used for military applications such as navigation, position tracking and antitheft systems. Nowadays sensitive magnetic sensors are used in many technical systems, including modern anti-tank missiles to identify the center of the target area and a minimal armor region.The applications of magnetoresistive structures based on semiconductor crystals of InSe for high precision measurement of the magnetic field are outlined in this article. Possibilities of using magnetic field sensors based on InSe structures for revealing the armour military vehicles are discussed. The impact of metal impurities on the layered structure of the semiconductor material as referred to the strong covalent bond within the layers as well as the weak van-der-Waals bond in the interlayer space is studied. Nyquist diagrams for InSe crystal with the impurities of nickel at different temperatures ranging from liquid nitrogen to room temperature are analyzed. Temperature is shown to be a significant factor for affecting the Nyquist diagrams. The curvature of the Nyquist diagrams for intercalated InSe varies with the temperature as opposed to the pure InSe. Topological images of crystal surface obtained by using atomic force microscopy confirmed the layer structure of nickel-intercalated InSe. Structures with alternating layers of semiconductor and metal provide the fundamental control of magnetic properties. These structures have a sharp anisotropy of magnetic susceptibility. The investigated semiconductor crystals with impurities of 3d-elements can extend the functionality of modern magnetic sensors designed to detect heavy armor.

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A study of the kinetic properties of nanostructured intercalates of AgxIn4Se3 aimed at the creation of photodetectors

Cited by 3 publications

References 5 publications

BRIEF OVERVIEW OF THE EPR SPECTRA OF In4Se3 INTERCALATED BY Cu

BRIEF OVERVIEW OF THE EPR SPECTRA OF In4Se3 INTERCALATED BY Cu

Influence of the metallic impurities in a3b6 type layered semiconductors on their electrical, magnetic and structural properties

Analysis of the electrical, magnetic and structural properties of A3B6 type layered semiconductor crystals intercalated with metals with reference to their military applications

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