A study of the influence of inter-metal dielectrics on electromigration performance

Foley, Sean; Ryan, A.; Martin, David; Mathewson, A.

doi:10.1016/s0026-2714(97)00075-9

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Improvement In Electromigration Performance Due To Low-k Die1

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2001

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Cited by 6 publications

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“…While some of the reports have shown degradation in EM lifetime due to low-k dielectrics, others have found improvement. S. Foley and co-workers found improvement in electromigration performance of Al(Cu) line with polyimide interlayer dielectric and was attributed to less severe flux divergences at defect locations in case of less rigid polyimide dielectric [80]. In this study, softer dielectric was also shown to be less prone to extrusion failure.…”

Section: Improvement In Electromigration Performance Due To Low-k Diesupporting

confidence: 48%

Study of electromigration-induced voiding mechanisms in Cu interconnects

Vairagar¹

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Section: Improvement In Electromigration Performance Due To Low-k Diesupporting

confidence: 48%

Study of electromigration-induced voiding mechanisms in Cu interconnects

Vairagar¹

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Design for reliability

Minehane¹,

Duane²,

O'Sullivan³

et al. 2000

Microelectronics Reliability

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Effects of dielectric materials on electromigration failure

Doan

Lee

et al. 2001

Journal of Applied Physics

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The effects of dielectric layers on electromigration failure were studied in situ using a high-voltage scanning electron microscope and at the wafer level using conventional accelerated testing. Several different passivation layers were deposited on wafers with A1 interconnect test structures. Prior to the deposition of the final dielectric, the wafers were processed identically and, whenever possible, simultaneously. Interconnects encapsulated with compliant polymer and very thin (0.1 μm) SiO2 layers demonstrated substantial lifetime extensions over those with more rigid (1 μm thick) SiO2 layers. Unpassivated lines behaved dramatically differently and failed much sooner than those covered with only 0.1 μm of SiO2. As expected, increasing the passivation thickness from 0.5 to 4 μm increased the electromigration lifetime for SiO2 covered specimens. The fabrication of silicon dioxide dielectrics using electron-cyclotron-resonance chemical-vapor deposition (CVD) and silicon nitride dielectrics via plasma-enhanced CVD damaged the interconnects. This damage nearly completely removed the barrier to void nucleation during electromigration.

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A study of the influence of inter-metal dielectrics on electromigration performance

Cited by 6 publications

References 10 publications

Study of electromigration-induced voiding mechanisms in Cu interconnects

Study of electromigration-induced voiding mechanisms in Cu interconnects

Design for reliability

Effects of dielectric materials on electromigration failure

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