A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface

Thiol-functionalization of Mn 5 Ge 3 thin films

“…This last observation could be explained by the fact that GeO 2 is soluble in water and that we used a 96% ethanol. This is consistent with several studies regarding the influence of wet surface treatments and SAM deposition processes which have demonstrated that water or a mixture of water and ethanol can dissolve germanium oxide [24,29,30]. Surprisingly, concerning the Mn 2p3/2 and O 1s core levels ( Fig.…”

Improvement in C-V characteristics of Ge metal-oxide semiconductor capacitor by H2O2 incorporated HCl pretreatment

“…The increase in C acc in the HCl-treated samples reflects the decrease in the residual Ge oxide thickness expected from the previously reported physical analyses. [8][9][10] On the other hand, a severe increase in the capacitance at the inversion side ͑⌬C inv ͒, which comes from minority carrier response, is clearly seen in the case of treatments A and B. H 2 O 2 incorporation into the pretreatment is effective for decreasing ⌬C inv ͑treatments C and D͒. In general, there are several different mechanisms to generate minority carrier at the inversion side such as generation-recombination processes through semiconductor midgap traps ͑E act ϳ E g / 2͒, diffusion from the bulk neutral region to the interface ͑E act ϳ E g ͒, and/or the existence of an inversion layer.…”

“…In order to reduce Ge oxide thickness, it is essential to select appropriate pretreatment for Ge surface prior to high-film deposition. The results of applying surface analysis techniques indicate that halogen acid wet solutions excluding HF are effective for suppressing the formation of Ge oxide, [8][9][10] in which case influences of the pretreatment on electrical characteristics of the MOS capacitor are still limited. 11 In this paper, the effects of HCl pretreatment for Ge surface prior to high-film deposition on electrical characteristics and physical properties are systematically investigated.…”

Cleaning Challenges and Solutions for Advanced Technology Nodes

“…For Ge, wet aqueous cleaning solutions can easily remove GeO 2 but it is rather difficult to completely remove GeO (or suboxides) [10]. For GaAs it is difficult to completely remove oxides by wet cleaning.…”