A study of the high frequency performance of thin film capacitors for electronic packaging

Chen, K.Y.; Brown, W.D.; Schaper, L.W.; Ang, Simon S.; Naseem, Hameed A.

doi:10.1109/6040.846648

Cited by 17 publications

(3 citation statements)

References 11 publications

(11 reference statements)

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“…The dielectric properties of insulating materials are important in many applications. The examples include low-k interconnect dielectric materials for microelectronics applications [1], films for random access memories [2], decoupling capacitors [3] and high-k dielectrics for transistor applications [4], among others. Methods of depositing various types of materials for producing thin films and nanostructures to be used as electrical or thermal insulators continue to be of current research interest [5].…”

Section: Introductionmentioning

confidence: 99%

Role of geometric parameters in electrical measurements of insulating thin films deposited on a conductive substrate

Kumar¹,

Gerhardt²

2012

Meas. Sci. Technol.

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The effects of film thickness, electrode size and substrate thickness on the impedance parameters of alternating frequency dielectric measurements of insulating thin films deposited on conductive substrates were studied through parametric finite-element simulations. The quasi-static forms of Maxwell's electromagnetic equations in a time harmonic mode were solved using COMSOL Multiphysics® for several types of 2D models (linear and axisymmetric). The full 2D model deals with a configuration in which the impedance is measured between two surface electrodes on top of a film deposited on a conductive substrate. For the simplified 2D models, the conductive substrate is ignored and the two electrodes are placed on the top and bottom of the film. By comparing the full model and the simplified models, approximations and generalizations are deduced. For highly insulating films, such as the case of insulating SiO2 films on a conducting Si substrate, even the simplified models predict accurate capacitance values at all frequencies. However, the edge effects on the capacitance are found to be significant when the film thickness increases and/or the top electrode contact size decreases. The thickness of the substrate affects predominantly the resistive components of the dielectric response while having no significant effect on the capacitive components. Changing the electrode contact size or the film thickness determines the specific values of the measured resistance or capacitance while the material time constant remains the same, and thus this affects the frequency dependence that is able to be detected. This work highlights the importance of keeping in mind the film thickness and electrode contact size for the correct interpretation of the measured dielectric properties of micro/nanoscale structures that are often investigated using nanoscale capacitance measurements.

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Section: Introductionmentioning

confidence: 99%

Role of geometric parameters in electrical measurements of insulating thin films deposited on a conductive substrate

Kumar¹,

Gerhardt²

2012

Meas. Sci. Technol.

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“…A typical anodized layer thickness of 0.15 m along with a relative dielectric constant of r ϭ 8.8 for anodized aluminum results in capacitive densities in the range of 460 -600 pF/mm 2 [5,6]-much larger than is possible with the standard dielectrics used to form interconnect-layer capacitors. The very thin dielectric also reduces the inductance of the anodized layer to just a few pH [7,8], an amount much smaller than the inductance of the interconnect necessary to connect to the capacitor. As a result, interconnect parasitics limit the performance of MCM-D embedded capacitors in a manner similar to the way lead parasitics limit the performance of chip components.…”

Section: Introductionmentioning

confidence: 99%

Microwave performance of MCM-D embedded capacitors with interconnects

Post¹

2005

Microw. Opt. Technol. Lett.

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terns at 2.5, 3.5, and 5.5 GHz, which are the center operating frequencies of the three possible frequency bands (licensed 2.5-and 3.5-GHz bands and unlicensed 5-GHz band) between 2 and 6 GHz proposed for WiMAX operation [9]. By comparing the radiation patterns at 5.5 GHz to those at 2.5 and 3.5 GHz, it was observed that the radiation patterns at 5.5 GHz are more like those of the conventional monopole antenna mounted on a large horizontal ground plane. This characteristic is exhibited largely because the main ground plane at 5.5 GHz has a relatively much larger wavelength dimension and thus performs less like a radiator than in the cases at 2.5 and 3.5 GHz. Figure 6 shows the measured radiation patterns at 1575 MHz. Comparable E and E components are observed, which are expected to be advantageous for application in a heavy multipath environment for E911 operation [3]. CONCLUSIONAn antenna system comprising a wideband stubby metal-plate monopole antenna for WiMAX operation in the frequency bands between 2 and 6 GHz and an internal GPS antenna at 1575 MHz for the E911 function have been proposed. The antenna system applied to a mobile phone has been successfully implemented. The experimental results indicate that good radiation characteristics over the WiMAX and GPS bands were obtained. Good isolation between the WiMAX and GPS antennas was also achieved.

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“…Parasitic resistance and capacitance between devices on a high-density integrated circuit platform is also an issue even if the transistor size is above the minimum practical size limit 6,7,8 . As the distance between on-chip electronic devices decreases, the higher contact resistance and contact-to-gate capacitance is on the order of the on-chip channel and intrinsic resistance and capacitance 9 .…”

Section: I1 Fundamental Limits To Integrated Circuit Growthmentioning

confidence: 99%