A study of the factors affecting the transmittance of lithium fluoride crystals

Smushkov, I. V.; Soifer, L.; Chubenko, A. I.; Shakhnovich, M. I.

doi:10.1007/bf00714707

Cited by 2 publications

(3 citation statements)

References 5 publications

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“…It can be conceived that the peak at 200 nm should be corresponding with absorption band at 196 nm, which is related to the O 2− Va + dipole absorption band [37]. An earlier investiga- tion has revealed that the O-doped LiFcrystal may induce some absorption bands, such as 143 and 200 nm [33]. The calculated results are very close to experimental data.…”

Section: Resultssupporting

confidence: 76%

“…The results from ε 2 (ω) also indicated that the optical absorption edge from the O-doped LiF crystal was also close to the pure LiF crystal. Moreover, the abundance of optical data from the O-doped LiF crystal suggests that doping can't influence band gap obviously [33,34]. So, in our calculation, we have used the energy scissors approximation with 5.5 eV to fit the calculated absorption edge for the experimental value.…”

Section: Resultsmentioning

confidence: 99%

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Ab initio calculations of electronic and optical properties in O-doped LiF crystal

Guo

Zhang

et al. 2008

Open Physics

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Abstract:We present a first-principle study of electronic and optical properties in pure LiF and O-doped LiF crystals. The pure LiF crystal exhibits a wide band gap while the O-doped LiF crystal shows the less band gap due to the contribution of O 2p. Some optical constants, such as dielectric functions, reflectivity and the refractive index, have been performed. The calculated reflectivity and refractive index from the pure LiF crystal agree with the experimental and recently calculated results in the low-energy range. Meanwhile, the optical properties have also been predicted from the O-doped LiF crystal. The absorption band in 200 nm has been observed, which is relatively close to the experimental result.PACS (

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Section: Resultssupporting

confidence: 76%

Section: Resultsmentioning

confidence: 99%

Ab initio calculations of electronic and optical properties in O-doped LiF crystal

Guo

Zhang

et al. 2008

Open Physics

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“…4, where we plot the extracted bulk losses for representative samples from commercial manufacturers and from the OSU project. 12. This loss value is much lower than that in Ref.…”

Section: Optical Materialscontrasting

confidence: 54%

Prospects for photolithography at 121 nm

Liberman

Rothschild

Murphy

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have evaluated several subsystems that would be required for lithography at 121 nm: radiation sources, optics, ambient control, and resists. Dense plasma sources can generate significant power, >0.5 J of 121 nm radiation per pulse. An extensive survey of commercially available LiF, as well as specially grown LiF, shows that transmission losses are ∼20% per cm, a value which is at least 5× too high if LiF is to be used as lens material. At present it is not clear whether there is a fundamental limitation to LiF transparency at 121 nm, but the main source of absorption arises from lithium oxide or hydroxide in the crystal. Polymers, fluorinated or not, exhibit very high absorption at 121 nm, indicating that ultrathin resists or bilayer resists will have to be used at 121 nm. However, the photochemistry at 121 nm is probably not much different from that at longer wavelengths. The resists are sensitive, ∼1 mJ/cm2 required dose, and they have high contrast at 121 nm. Finally, we have also performed preliminary patterning experiments. Using contact printing with a phase shifting mask we have printed 45 nm features in an ultrathin photoresist.

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A study of the factors affecting the transmittance of lithium fluoride crystals

Cited by 2 publications

References 5 publications

Ab initio calculations of electronic and optical properties in O-doped LiF crystal

Ab initio calculations of electronic and optical properties in O-doped LiF crystal

Prospects for photolithography at 121 nm

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