A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts

Fung, A.; Borton, J. E.; Nathan, M. I.; Hove, J. M. Van; Hickman, R.; Chow, P. P.; Wowchak, A. M.

doi:10.1007/s11664-999-0115-x

Cited by 12 publications

(4 citation statements)

References 31 publications

(24 reference statements)

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“…The contact scheme Ni/Au [2,3,4,5,6] is widely used for GaN device fabrication. Based on the "NOG" principles, this scheme works due to the reaction between Ni and GaN.…”

Section: Explanation Of Literaturementioning

confidence: 99%

“…GaN alloys have received great interest in the past decade due to applications in photonic and electronic devices. However, because of the low free hole concentrations of p-GaN (10 17 cm -3 ) and lack of a metal with a work function φ equal to or greater than the bandgap plus electron affinity (E g + χ s = 7.5 eV), attempts to make low resistance ohmic contacts to p-GaN have been unsuccessful [1][2][3][4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

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A Thermodynamic Approach to Ohmic Contact Formation to p-GaN

Liu

Ahonen

Holloway

2000

MRS Internet j. nitride semicond. res.

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A new ohmic contact scheme for gallium nitride is presented. The use of Nitride-forming metal Over Gallide-forming metal, “NOG”, can modify the thermodynamic activity of N and Ga near the interface. This in turn can modify the near-surface point defect concentrations, particularly the vacancies of Ga and N. The principle of this contact scheme was shown to be consistent with results from Ni/Au, Ni/Zn-Au, Ta/Ti, and Ni/Mg/Ni/Si contacts. In the present study, the “NOG” scheme was used to design Ni/Ti/Au and Ni/Al/Au metallization, and addition of Ti and Al nitride-forming metals to the Ni gallide-forming metal led to lower but still high contact resistance. Ti was shown to be better than Al as the nitride-forming metal based on the decrease of resistance in as deposited contacts. Compared to Ni/Au, four times more current was measured in Ni/Ti/Au contacts to p-GaN after anneal at 300°C for 5min. However the addition of the Ti nitride-forming metal led to lower stability at 500°C.

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“…The contact scheme Ni/Au [2,3,4,5,6] is widely used for GaN device fabrication. Based on the "NOG" principles, this scheme works due to the reaction between Ni and GaN.…”

Section: Explanation Of Literaturementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Thermodynamic Approach to Ohmic Contact Formation to p-GaN

Liu

Ahonen

Holloway

2000

MRS Internet j. nitride semicond. res.

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“…Although the high performance of the devices has been demonstrated, the devices suffer from very low external quantum efficiency due to conventional opaque electrodes and non-uniform current spreading. Ni/Au bilayer is commonly used as transparent ohmic contact on p-GaN [1]. However, the electrode cannot spread current effectively into active region due to its small thickness and the thermal stability is poor.…”

mentioning

confidence: 99%

Transparent Ohmic Contacts on p‐GaN Using an Indium Tin Oxide Overlayer

Kim

Jang

Lee

2002

phys. stat. sol. (c)

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“…Many attempts have been reported thus far in finding ways of lowering the contact resistance in p-type GaN materials. Recently, various Au-based ohmic contacts using metallization such as Ni/Au, [9][10][11] Co/Au, 12 Pd/Au, 13 Pd/Pt/Au, 14 Ni/Pt/Au, 15 Pt/Ni/Au, 16 and Ti/Pt/Au 17 have been reported. These contact metallizations were either annealed in a nitrogen and oxygen environment or without any annealing.…”

mentioning

confidence: 99%

Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization

Chu

Wang

et al. 2000

Applied Physics Letters

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Cross-plane electronic and thermal transport properties of p-type La0.67Sr0.33MnO3/LaMnO3 perovskite oxide metal/semiconductor superlattices J. Appl. Phys. 112, 063714 (2012) Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors J. Appl. Phys. 112, 054513 (2012) Modulation doping to control the high-density electron gas at a polar/non-polar oxide interface Appl. Phys. Lett. 101, 111604 (2012) Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n-InGaAs

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A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts

Cited by 12 publications

References 31 publications

A Thermodynamic Approach to Ohmic Contact Formation to p-GaN

A Thermodynamic Approach to Ohmic Contact Formation to p-GaN

Transparent Ohmic Contacts on p‐GaN Using an Indium Tin Oxide Overlayer

Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization

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